Semiconductor Substrate Oxygen Profile for Consistent Device Characteristics
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Solution Overview
Problem
The characteristics of semiconductor devices are influenced by variations in oxygen concentration within the semiconductor substrate, leading to inconsistent performance.
Innovation Solution
A semiconductor device with a controlled oxygen concentration distribution is achieved by annealing the substrate to introduce oxygen up to the solid solubility limit and then thinning it to create a high oxygen concentration peak near the surface, gradually decreasing to the substrate's lower surface concentration, with a controlled depth and gradient.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen concentration in the semiconductor substrate is increased to improve device characteristics, then device performance is enhanced, but oxygen concentration variations cause inconsistent performance
Solution Approach 1:
The patent applies local quality by creating a non-uniform oxygen concentration distribution within the semiconductor substrate. Specifically, it forms a first oxygen concentration region with higher oxygen concentration and a second oxygen concentration region with lower oxygen concentration, allowing different regions to have optimized oxygen levels for their specific functions, thereby improving overall device consistency while accounting for local requirements
Solution Approach 2:
The patent employs preliminary action by performing oxygen concentration adjustment through annealing treatment before the semiconductor device manufacturing process begins. This pre-treatment establishes the desired oxygen concentration distribution in advance, ensuring consistent device characteristics from the outset rather than attempting to correct variations during subsequent manufacturing steps
2Reliability
If uniform oxygen concentration is maintained throughout the substrate, then manufacturing simplicity is preserved, but device characteristics vary due to oxygen concentration inconsistencies
Solution Approach 1:
The patent implements parameter changes by systematically controlling oxygen concentration as a key parameter during annealing treatment. It establishes specific oxygen concentration ranges for different regions (first oxygen concentration region with higher concentration, second oxygen concentration region with lower concentration), transforming the oxygen distribution from an uncontrolled variable to a precisely managed parameter that directly influences device characteristic consistency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise control of oxygen concentration, reducing variations and enhancing the consistency and performance of semiconductor devices.
Implementation Method 1
an annealing step of annealing an initial substrate so that a solid solubility limit concentration of oxygen with respect to the initial substrate is to be higher than a current oxygen concentration in the initial substrate
Implementation Method 2
a thinning step of thinning the initial substrate from a lower surface-side of the initial substrate to form a semiconductor substrate
Data Source
AI summary
Provided is a semiconductor device comprising a semiconductor substrate containing oxygen. An oxygen concentration distribution in a depth direction of the semiconductor substrate has a high oxygen concentration part where an oxygen concentration is higher on a further upper surface-side than a center in the depth direction of the semiconductor substrate than in a lower surface of the semiconductor substrate. The high oxygen concentration part may have a concentration peak in the oxygen concentration distribution. A crystal defect density distribution in the depth direction of the semiconductor substrate has an upper surface-side density peak on the upper surface-side of the semiconductor substrate, and the upper surface-side density peak may be arranged within a depth range in which the oxygen concentration is equal to or greater than 50% of a peak value of the concentration peak.