Semiconductor Device With Oxygen-Rich Insulator
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving stable electrical characteristics, high transistor density, and efficient data retention and writing speeds while minimizing power consumption and design complexity.
Innovation Solution
A semiconductor device structure is developed with a transistor having a metal oxide layer that inhibits oxygen passage, featuring a specific gate electrode and insulating film configuration, along with a method for manufacturing that includes forming insulators with excess oxygen to control transistor density and contact area, enabling efficient electrical connectivity and reduced parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to achieve high integration, then productivity and device capability are improved, but variation in transistor characteristics increases due to changes in electrode-insulator contact area
Solution Approach 1:
The patent changes the physical and chemical parameters of the insulator by forming it with excess oxygen and controlling its thickness to be 5 nm to 50 nm. This parameter control ensures that the insulator can supply oxygen to the oxide semiconductor layer during heat treatment, stabilizing the transistor characteristics even as transistor density increases and electrode-insulator contact areas change.
Solution Approach 2:
The insulator is pre-formed with excess oxygen before the oxide semiconductor layer is processed. This preliminary action of oxygen enrichment in the insulator allows the oxide semiconductor to be consistently reoxidized during subsequent heat treatment steps, preventing characteristic variation regardless of the electrode-insulator contact area that results from high transistor density.
2Reliability
If oxide semiconductor is used to achieve stable electrical characteristics, then reliability is improved, but manufacturing complexity increases due to additional oxygen control requirements
Solution Approach 1:
The patent merges the oxygen supply function into the insulator layer that already exists in the transistor structure. By forming the insulator with excess oxygen, it simultaneously serves as both an electrical insulator and an oxygen reservoir for the oxide semiconductor, eliminating the need for separate oxygen treatment layers or complex oxygen management processes.
Solution Approach 2:
The insulator with excess oxygen automatically supplies oxygen to the oxide semiconductor layer during heat treatment without requiring external oxygen introduction or complex control systems. The insulator self-regulates the oxygen flow to maintain stable electrical characteristics, simplifying the manufacturing process.
3Volume of moving object
If insulator thickness is reduced to achieve miniaturization, then device size is decreased, but oxygen supply capability to oxide semiconductor may be insufficient
Solution Approach 1:
The patent optimizes the insulator thickness parameter to be between 5 nm and 50 nm, which is thin enough for miniaturization but thick enough to provide sufficient oxygen supply capability. The excess oxygen content in the insulator compensates for the reduced thickness, ensuring adequate oxygen diffusion to the oxide semiconductor layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides semiconductor devices with reduced variation in transistor characteristics, high transistor density, long data retention, high-speed data writing, low power consumption, and design flexibility, while maintaining stable electrical performance.
Implementation Method 1
the insulating film includes excess oxygen... the insulating film over the source electrode and the insulating film over the drain electrode are in contact with the oxide... oxygen passage inhibition
Implementation Method 2
a metal oxide over the insulating film... the metal oxide has a function of inhibiting the passage of oxygen
Data Source
AI summary
A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.