Semiconductor Device With P-Type Ground Region
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Solution Overview
Problem
As semiconductor devices are processed with finer design rules, electrons injected into a p-type substrate can still reach other element formation regions, causing malfunctions despite the presence of an active barrier region, especially when the distance between output transistor and other element formation regions decreases.
Innovation Solution
A semiconductor device is designed with a p-type ground region and an n-type region, where the p-type ground region is electrically coupled to the p-type substrate and has a ground potential, and the n-type region acts as a resistor between the p-type ground region and the injection elements, preventing electrons from detouring and reaching other injection elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an active barrier region is formed between the output transistor formation region and the other element formation region, then electrons injected into the p-type substrate are prevented from reaching other element formation regions, but when the distance between the output transistor formation region and the other element formation region becomes smaller, electrons can still reach the other element formation region causing malfunction
Solution Approach 1:
The p-type substrate is divided into multiple p-type regions (first p-type region under the output transistor, second p-type region under the other element, and third p-type region in between). This segmentation creates distinct zones with different potential control capabilities, allowing the third p-type region to act as an isolated barrier that prevents electron migration between the first and second p-type regions even when the overall distance is reduced.
Solution Approach 2:
The third p-type region serves as an intermediary barrier between the first and second p-type regions. By controlling the potential of this intermediate region (making it more negative than adjacent regions), it acts as a potential hill that repels injected electrons, preventing them from reaching the other element formation region regardless of the reduced distance between functional regions.
2Productivity
If the distance between the output transistor formation region and the other element formation region is reduced to increase integration density, then productivity is improved, but electrons injected into the p-type substrate can more easily reach the other element formation region causing malfunction
Solution Approach 1:
The substrate is segmented into multiple p-type regions with the third p-type region positioned between the output transistor and other elements. This segmentation allows close proximity of functional regions (high integration density) while maintaining electrical isolation through the potential-controlled third region, preventing electron migration even at reduced distances.
Solution Approach 2:
The potential parameter of the third p-type region is changed to be more negative than adjacent p-type regions. This parameter change creates a potential barrier that dynamically prevents electron migration. By adjusting the potential parameter of the intermediate region rather than relying solely on physical distance, high integration density can be achieved without sacrificing reliability.
3Reliability
If a high-concentration impurity diffusion region is provided to surround the CMOS circuit to prevent electron injection effects, then reliability is improved, but device complexity increases
Solution Approach 1:
Instead of uniformly surrounding the CMOS circuit with high-concentration impurity diffusion regions, the patent applies different impurity concentrations to different regions. The third p-type region has a specific impurity concentration designed to create the appropriate potential barrier, while other regions have different concentrations optimized for their specific functions. This local differentiation achieves protection while reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents electrons from moving from one injection element to another, thereby reducing the likelihood of malfunctions in semiconductor devices by attracting and retaining electrons within the p-type ground region or drawing them out with a ground potential, ensuring precise control over electron movement.
Implementation Method 1
the p-type ground region is electrically coupled to the p-type substrate and has a ground potential, and the n-type region acts as a resistor between the p-type ground region and the injection elements, preventing electrons from detouring and reaching other injection elements
Implementation Method 2
the n-type region acts as a resistor between the p-type ground region and the injection elements, preventing electrons from detouring and reaching other injection elements
Data Source
AI summary
The semiconductor device includes: a semiconductor substrate; a pair of injection elements; an active barrier structure; and a p-type ground region. The semiconductor substrate has a main surface and a p-type region formed therein. The active barrier structure is arranged in a region sandwiched between the pair of injection elements over the main surface. The p-type ground region is a ground potential-applicable region which is formed closer to an end side of the main surface than the pair of injection elements and the active barrier structure, bypassing a region sandwiched between the pair of injection elements over the main surface, and which is electrically coupled to the p-type region. The p-type ground region is divided by a region adjacent to the region sandwiched between the pair of injection elements.