Semiconductor Package Adhesion Layer for Delamination Control
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Solution Overview
Problem
In semiconductor package structures, delamination occurs due to insufficient adhesion between the device wafer or die and the molding compound, which is not effectively addressed by plasma treatment, as it changes the surface physical character but not the chemical character, and can damage other materials, leading to molding compound overflow.
Innovation Solution
A semiconductor package structure with an adhesion strengthening layer conformally disposed on the side surface of a conductive pillar and the active surface of a semiconductor device, which acts as a buffer between the encapsulant and the semiconductor device, preventing delamination and improving yield and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma treatment is performed to improve adhesion, then adhesion between surface and molding compound is enhanced, but other materials in the intermediate packaging product are attacked, causing temporary molding compound deterioration and overflow
Solution Approach 1:
The patent introduces a coupling agent as an intermediary substance between the surface and molding compound. This intermediary layer selectively bonds to the surface through chemical treatment while being compatible with the molding compound, preventing direct harmful interactions between plasma treatment and other materials while still achieving adhesion enhancement.
Solution Approach 2:
The patent modifies the surface chemical parameters through controlled chemical treatment rather than aggressive plasma treatment. By adjusting the chemical properties of the surface (such as introducing reactive functional groups), the treatment achieves adhesion enhancement while being less harmful to other materials in the packaging structure.
Data Source
AI summary
A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.