Semiconductor Package Alignment Layout for Accurate Chip Inspection
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving accurate inspection and integration of semiconductor chips due to limitations in alignment key patterns, leading to potential warpage issues and restricted design freedom for integrated circuits.
Innovation Solution
The semiconductor package design includes a first semiconductor chip with a first alignment key pattern and a second semiconductor chip with a second alignment key pattern, where the second chip is smaller and spaced apart from the first, allowing for accurate recognition and inspection through the use of alignment key patterns on the edge regions of the interconnection layers, which are electrically isolated and exposed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional semiconductor package structure is used with limited alignment key patterns, then the structure is simple, but inspection accuracy is insufficient
Solution Approach 1:
The alignment key pattern is divided into multiple segments: a first alignment key pattern on the first semiconductor chip, a second alignment key pattern on the second semiconductor chip, and a third alignment key pattern on the interconnection layer. This segmentation allows for multi-point inspection and verification, significantly improving inspection accuracy while maintaining reasonable structural complexity
Solution Approach 2:
The interconnection layer serves as an intermediary element that provides a third alignment key pattern, enabling indirect alignment verification between the two semiconductor chips. This intermediary structure facilitates more accurate inspection without requiring direct chip-to-chip alignment markers
2Manufacturing precision
If alignment key patterns are placed on chip surfaces, then alignment is facilitated, but warpage issues occur due to structural constraints
Solution Approach 1:
The alignment key patterns are extracted from the chip surfaces and relocated to the interconnection layer. Specifically, the third alignment key pattern is formed on the interconnection layer between the two chips, separating the alignment function from the chip structures themselves. This extraction eliminates the constraint that caused warpage while preserving alignment precision
Solution Approach 2:
The alignment key patterns are positioned in different spatial dimensions: the first on the first chip, the second on the second chip, and the third on the interconnection layer in between. This multi-dimensional arrangement provides alignment references from multiple perspectives, improving precision without inducing warpage in any single chip
3Area of stationary object
If chips are closely integrated for compact design, then space is optimized, but design freedom for integrated circuits is restricted
Solution Approach 1:
The second semiconductor chip is designed with a width smaller than the first chip, allowing it to be positioned within the footprint of the first chip without requiring additional lateral space. This self-accommodating design enables compact integration while preserving design freedom for the circuit layouts
Data Source
AI summary
A semiconductor package may include a redistribution substrate, a first semiconductor chip on the redistribution substrate, and a second semiconductor chip between the redistribution substrate and the first semiconductor chip. The second semiconductor chip may have a width in a first direction that is smaller than a width of the first semiconductor chip in the first direction. The first semiconductor chip may include a first alignment key pattern on a bottom surface thereof. The second semiconductor chip may be spaced apart from the first alignment key pattern. The second semiconductor chip may include a second interconnection layer on the bottom surface of the first semiconductor chip, a second semiconductor substrate on a bottom surface of the second interconnection layer and exposing a bottom surface of an edge region of the second interconnection layer, and a second alignment key pattern on the edge region of the second interconnection layer.


