Semiconductor Package Thermal Stress Management

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Solution Overview

Problem

Existing semiconductor packages face issues with heat dissipation and thermal expansion, leading to cracks and breaks in metal and ceramic components due to differences in thermal expansion coefficients, which affect the reliability and longevity of high-frequency semiconductor devices.

Innovation Solution

A semiconductor package design featuring a metal board with a mount for the semiconductor device, a first frame with a smaller thermal expansion coefficient than the metal board, and a second frame surrounding the mount, along with an alloy layer and bonds between these components, which reduces thermal stress and deformation, enhancing heat dissipation and structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a metal board is used to improve heat dissipation, then heat dissipation performance is improved, but thermal expansion coefficient difference causes breaks in bonded components

Engineering Contradiction:
Improveheat dissipation performanceVSAvoidstructural integrity
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent employs a composite structure consisting of a metal board bonded to a ceramic substrate. The metal board provides superior heat dissipation properties, while the ceramic substrate offers low thermal expansion characteristics. This composite material approach allows the system to simultaneously achieve high heat dissipation performance and resistance to thermal expansion stress, preventing breaks in bonded components.

Inventive Principle:
Principle #40Composite materials

2Temperature

If frames with different thermal expansion coefficients are bonded to metal board, then heat dissipation is improved, but thermal stress causes breaks in bonded frames

Engineering Contradiction:
Improveheat dissipationVSAvoidbonded frame integrity
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The patent carefully selects and controls the thermal expansion coefficients of the ceramic substrate and bonding materials to match or closely approximate each other. By adjusting and optimizing these material parameters, the patent minimizes differential thermal expansion between components during temperature cycling, thereby reducing thermal stress and preventing breaks in the bonded frames while maintaining effective heat dissipation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces thermal expansion-related stress and deformation, improving heat dissipation and preventing cracks or breaks in the semiconductor package, thereby enhancing the reliability and longevity of high-frequency semiconductor devices.

Implementation Method 1

The first frame has a smaller thermal expansion coefficient than the metal board. The second frame has a smaller thermal expansion coefficient than the metal board.

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11437296B2Semiconductor package, semiconductor apparatus, and method for manufacturing semiconductor package
Publication Date: 2022.09.06 KYOCERA CORP
  • US11437296B2 patent drawing
  • US11437296B2 patent drawing
  • US11437296B2 patent drawing

AI summary

A semiconductor package in an aspect of the present invention includes a metal board, a first frame, a second frame, and a bond. The metal board has an upper surface including a mount on which a semiconductor device is mountable. The first frame has a side surface facing a side surface of the metal board and has a smaller thermal expansion coefficient than the metal board. The second frame is on upper surfaces of the metal board and the first frame and surrounds the mount, and has a smaller thermal expansion coefficient than the metal board. The bond is between the metal board and the first frame, between the metal board and the second frame, and between the first frame and the second frame. The semiconductor package includes an alloy layer between the metal board and the bond.