Semiconductor Package Antenna Heat Dissipation Lateral Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing the thickness of semiconductor packages while effectively integrating heat dissipation structures to manage the heat generated by passive components and chips.
Innovation Solution
The integration of a heat dissipation structure with high thermal expansion materials like copper or aluminum, combined with thermal paste layers and redistribution layers, alongside an antenna design that includes air cavities to minimize thickness and enhance thermal and signal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat dissipation structure is integrated into the semiconductor package, then heat dissipation performance is improved, but package thickness increases
Solution Approach 1:
The patent transitions from vertical stacking (z-dimension) to lateral integration (x-y plane) by placing the antenna and heat dissipation structure side-by-side on the same substrate layer. This dimensional reconfiguration allows both components to coexist without increasing package thickness, as they occupy different lateral spaces rather than stacking vertically.
Solution Approach 2:
The patent merges the antenna structure with the heat dissipation structure by integrating both functions into a unified lateral layout on the substrate. The antenna element and heat dissipation features share the same packaging plane, combining multiple functions within the same lateral footprint without requiring additional vertical space.
2Temperature
If high thermal expansion materials like copper or aluminum are used for heat dissipation, then heat dissipation capability is improved, but thermal stress and reliability issues arise
Solution Approach 1:
The patent applies different material properties to different regions: high thermal conductivity materials (copper or aluminum) are used specifically for heat dissipation structures where thermal management is critical, while the substrate and other components use materials with matched thermal expansion coefficients. This localized material selection optimizes heat dissipation in critical areas while minimizing thermal stress in other regions.
Solution Approach 2:
The patent employs composite material structures combining materials with different thermal properties. The heat dissipation structure uses high thermal conductivity materials (copper/aluminum) integrated with the substrate through intermediate layers or joint structures that accommodate thermal expansion differences, creating a composite system that achieves both heat dissipation performance and thermal stress resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for improved heat dissipation and reduced package thickness, maintaining the performance of both the heat dissipation and antenna components within the semiconductor package.
Implementation Method 1
a first thermal paste layer disposed between the integrated circuit and the first redistribution layer and a second thermal paste layer disposed between the heat dissipation structure and the first redistribution layer
Implementation Method 2
the heat dissipation structure is mounted on a second surface of the first RDL
Implementation Method 3
heat dissipation structure with high thermal expansion materials like copper or aluminum
Implementation Method 4
an antenna design that includes air cavities to minimize thickness and enhance thermal and signal performance
Data Source
AI summary
A semiconductor package, a semiconductor device and a method for packaging the semiconductor device are provided. A semiconductor package includes a first conductive wire layer with a first mounting area and a second mounting area, an integrated circuit (IC), a radiation fin structure and an antenna. The first mounting area and the second mounting area do not overlap. The IC is disposed on a first surface of the first mounting area. The radiation fin structure is disposed on a second surface of the first mounting area. The antenna is disposed on the second mounting area.


