Semiconductor Package Antenna Integration via Insulator Offset
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in efficiently integrating antenna elements with semiconductor dies at the wafer level, leading to issues with stress distribution and reliability during thermal processes, which affects the overall performance and yield of 3D packaging and 3DIC devices.
Innovation Solution
A manufacturing method involving a carrier with a debond layer and buffer layer, where a redistribution circuit structure is formed with dielectric and metallization layers, through vias are created, and semiconductor dies are encapsulated with an insulating layer. Antenna elements are then positioned on the redistribution circuit structure, separated from the semiconductor die by insulators and metallic patterns, reducing stress and enhancing electromagnetic wave coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If antenna elements are integrated with semiconductor dies at wafer level, then productivity is improved, but stress distribution and reliability deteriorate
Solution Approach 1:
The patent introduces an intermediary carrier substrate that mediates between the antenna elements and semiconductor dies. The carrier provides a stable platform for wafer-level processing and includes stress management structures (such as compliance layers or stress compensation features) that protect the semiconductor dies from thermal stress while enabling efficient integration. This intermediary structure allows high-productivity wafer-level packaging while maintaining reliability by isolating the dies from direct stress exposure.
Solution Approach 2:
The patent modifies physical parameters of the packaging structure, including introducing compliant materials with matched thermal expansion coefficients, adjusting layer thicknesses to optimize stress distribution, and designing interconnect structures that accommodate thermal cycling. These parameter changes enable the system to maintain reliability during thermal processes while preserving the productivity benefits of wafer-level integration.
2Area of stationary object
If antenna elements are positioned close to semiconductor die, then electromagnetic wave coverage is improved, but stress on semiconductor die increases
Solution Approach 1:
The patent segments the packaging structure into distinct functional zones: an antenna region for electromagnetic wave generation, a transition region with stress management structures, and a die region for the semiconductor component. This segmentation allows the antenna elements to be positioned close to the die for maximum electromagnetic coverage while inserting stress-isolating structures (such as recesses, compliance layers, or separation features) between them to protect the die from stress.
3Adaptability or versatility
If complex redistribution circuit structure is formed, then device functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent implements preliminary action by forming the complex redistribution circuit structures, via holes, and interconnect patterns on the carrier substrate before mounting the semiconductor dies. This allows the complex routing and connections to be established in advance using high-precision wafer-level processing techniques, while the dies themselves remain relatively simple. The pre-configured carrier structure then serves as a ready-made interconnection platform, reducing the manufacturing complexity at later stages while maintaining full device functionality.
Data Source
AI summary
A package structure includes a redistribution circuit structure, at least one semiconductor die, an insulating encapsulation, insulators, and metallic patterns. The at least one semiconductor die is located on and electrically connected to the redistribution circuit structure. The insulating encapsulation encapsulates the at least one semiconductor die and located on the redistribution circuit structure. The insulators are located on the redistribution circuit structure, wherein the insulators are separated and spaced apart from each other, wherein edges of each of the insulators are distant from edges of the at least one semiconductor die by an offset in a stacking direction of the redistribution circuit structure and the insulating encapsulation. Each of the metallic patterns is located on a respective one of the insulators.