Semiconductor Package Layer Stack for Antenna Warpage Control
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Solution Overview
Problem
Semiconductor device packages with unbalanced substrate dielectric constants between the antenna layer and the RF routing layer experience warpage issues during manufacturing, leading to potential failure.
Innovation Solution
The implementation of a semiconductor device package with two circuit layers having different coefficients of thermal expansion (CTE) and dielectric constants, where one circuit layer matches the antenna layer's dielectric constant and the other provides higher rigidity, along with a substrate structure that includes conductive and dielectric layers, helps mitigate warpage by balancing the thermal expansion differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the antenna layer uses a substrate with low dielectric constant and loss tangent to improve radiation efficiency, then the antenna performance is improved, but the substrate structure becomes unbalanced causing warpage during manufacturing
Solution Approach 1:
The patent changes the dielectric constant parameter of the substrate material used in the RF routing layer. By selecting a substrate with a higher dielectric constant for the RF routing layer compared to the antenna layer, the patent balances the overall substrate structure while maintaining the low dielectric constant requirement for the antenna layer to ensure proper radiation efficiency
Solution Approach 2:
The patent employs a composite substrate structure consisting of multiple layers with different dielectric constants. The antenna layer substrate maintains low dielectric constant for radiation efficiency, while the RF routing layer substrate uses a higher dielectric constant material to balance the overall structure and prevent warpage during manufacturing
2Adaptability or versatility
If circuit layers with different CTE values are used to provide functional differentiation, then circuit performance is improved, but thermal expansion differences cause warpage and delamination
Solution Approach 1:
The patent applies local quality by assigning different CTE values to specific circuit layers based on their functional requirements. The first circuit layer has a CTE closer to the antenna layer for stability, while the second circuit layer has a different CTE optimized for its specific circuit functions, allowing functional differentiation without compromising overall layer adhesion
Solution Approach 2:
The patent carefully selects and controls the CTE parameters of different circuit layers. By optimizing the CTE values and their distribution across layers, the patent achieves both functional differentiation and thermal expansion compatibility, preventing warpage and delamination while maintaining circuit performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces warpage and enhances the manufacturing stability of semiconductor device packages by ensuring proper alignment and adhesion of circuit layers, thereby preventing delamination and improving the overall package integrity.
Implementation Method 1
The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
Implementation Method 2
The first circuit layer has a first conductive layer and a first dielectric layer at least partially covering the first conductive layer. The second circuit layer is disposed on the first surface of the substrate. The second circuit layer has a second conductive layer and a second dielectric layer at least partially covering the second conductive layer. A dielectric constant (Dk) of the first dielectric layer is less than a Dk of the second dielectric layer.
Data Source
AI summary
The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.