Multi-Chip Semiconductor Package With Barrier-Layer Heat Path
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Solution Overview
Problem
The challenge in semiconductor packaging is to effectively manage heat dissipation and maintain reliability in miniaturized, high-performance semiconductor packages with integrated multiple chips, where thermal expansion mismatches and metal diffusion can lead to reliability issues.
Innovation Solution
A semiconductor package design featuring a substrate with a first and second semiconductor chip, a barrier layer exposing part of the first chip, and a heat transfer part in direct contact with the first chip but not the second, utilizing an adhesive metal layer and a heat transfer material layer to enhance heat dissipation and prevent metal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor chips are integrated in a single package to reduce size, then miniaturization and high capacity are achieved, but heat dissipation becomes more difficult and thermal expansion mismatches increase
Solution Approach 1:
The patent divides the package structure into distinct functional regions: a first trench for housing a first semiconductor chip, a second trench for a second semiconductor chip, and a raised portion for heat dissipation. This segmentation allows each component to be optimized independently for its specific function while maintaining compact overall packaging.
Solution Approach 2:
The patent utilizes vertical dimension by creating trenches that extend into the substrate and forming a raised portion that protrudes from the substrate surface. This three-dimensional arrangement allows multiple chips to be packaged in a smaller footprint while providing dedicated pathways for heat dissipation in the vertical direction.
2Productivity
If multiple semiconductor chips are integrated in a single package, then high capacity and multi-functionality are achieved, but reliability decreases due to thermal expansion mismatches and metal diffusion
Solution Approach 1:
The patent introduces an intermediary barrier layer between adjacent semiconductor chips and their respective trenches. This barrier layer prevents metal diffusion from one chip to another while allowing thermal expansion mismatches to be accommodated, thereby maintaining reliability in high-capacity multi-chip packages.
Solution Approach 2:
The patent applies different material properties to different regions: the barrier layer has metal diffusion resistance properties, the trenches provide mechanical isolation, and the raised portion provides thermal management. Each region is optimized with specific local qualities to address different aspects of reliability.
3Reliability
If a barrier layer is added to prevent metal diffusion, then reliability is improved, but heat transfer efficiency may be reduced
Solution Approach 1:
The patent extracts the heat transfer function from the barrier layer by providing a dedicated raised portion that protrudes from the substrate. This separation allows the barrier layer to focus on metal diffusion prevention while the raised portion handles heat transfer, eliminating the trade-off between these two functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves heat dissipation and reliability by allowing efficient heat transfer from the first chip while preventing metal diffusion, addressing thermal expansion mismatches and enhancing operating performance.
Implementation Method 1
a heat transfer part on the barrier layer and in direct contact with the first semiconductor chip exposed by the opening
Implementation Method 2
a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed
Data Source
AI summary
A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.