Semiconductor Package Bridge Layout With Fewer Redistribution Layers

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The existing semiconductor package design faces challenges with exposed silicon bridges and complex redistribution structures that increase manufacturing difficulty and reduce reliability, particularly when chiplets are connected using a redistribution layer and silicon bridge structure.

Innovation Solution

A semiconductor package design incorporating a sub-semiconductor package with a bridge die and passive element die, covered by molding materials, reduces exposure and simplifies the redistribution structure, allowing for improved power integrity and efficient signal transmission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If silicon bridges are exposed to the outside together with connection members, then connection members can be accessed externally, but the exposed silicon bridges are damaged by the external environment

Engineering Contradiction:
Improveexternal access to connection membersVSAvoidprotection of silicon bridges
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent separates the protection function from the connection function by using a molding material that covers only the silicon bridges while leaving the connection members exposed. This segmentation allows the package to simultaneously protect vulnerable components and maintain external accessibility for connection members.

Inventive Principle:
Principle #1Segmentation

2Loss of information

If the redistribution structure includes a routing path of the silicon bridge, then signal transmission is enabled, but the layer structure becomes 5 or more layers increasing manufacturing difficulty

Engineering Contradiction:
Improvesignal transmission capabilityVSAvoidmanufacturing complexity of redistribution structure
Core Design Contradiction:
Loss of informationVSEase of manufacture

Solution Approach 1:

The patent transitions from a planar redistribution structure with multiple layers to a three-dimensional structure where the silicon bridge provides vertical routing. This dimensional change enables signal transmission paths that extend through the depth of the package rather than requiring additional horizontal layers, thereby reducing manufacturing complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Loss of information

If the redistribution structure has a layer structure of 5 or more layers, then routing paths are established, but the reliability of the redistribution structure is reduced

Engineering Contradiction:
Improverouting path establishmentVSAvoidreliability of redistribution structure
Core Design Contradiction:
Loss of informationVSReliability

Solution Approach 1:

The patent extracts the silicon bridge routing function from the conventional planar redistribution layer structure. By utilizing the vertical space and three-dimensional configuration of the silicon bridge, the patent eliminates the need for complex multi-layer routing while maintaining signal transmission capability, thereby improving reliability.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentEP4682955A1Semiconductor package
Publication Date: 2026.01.21 SAMSUNG ELECTRONICS CO LTD
  • EP4682955A1 patent drawingFigure 1
  • EP4682955A1 patent drawingFigure 2
  • EP4682955A1 patent drawingFigure 3

AI summary

A semiconductor package (200A) may include a first redistribution structure (220), a sub-semiconductor package (100A) on the first redistribution structure (220), where the sub-semiconductor package (100A) may include a second redistribution structure (120), a bridge die (130) on the second redistribution structure (120), a first molding material (160) configured to cover the bridge die (130) on the second redistribution structure (120), a third redistribution structure (170) on the first molding material (160) and on the bridge die (130), a first semiconductor die (180) on the third redistribution structure (170), a second semiconductor die (190) on the third redistribution structure (170), and beside the first semiconductor die (180), where the second semiconductor die (190) is electrically connected to the first semiconductor die (180) through the bridge die (130), and a second molding material (161) configured to cover the first semiconductor die (180) and the second semiconductor die (190), on the third redistribution structure (170), and a third molding material (260) configured to cover the sub-semiconductor package (100A), on the first redistribution structure (220).