Semiconductor Package Low Melting Point Bump Protection
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Solution Overview
Problem
Semiconductor packages face challenges in preventing damage to connection pads during probe tests and contamination from encapsulant bleeding, especially when packaged in the form of integrated circuits, and require efficient redistribution layer formation to reduce thickness and enhance mechanical performance.
Innovation Solution
A semiconductor package design featuring a semiconductor chip with a passivation film, a low melting point connection bump, and a coating layer on the chip's active surface, along with a redistribution layer and connection via structure, which includes conductive materials and insulating layers to protect the connection pad and facilitate easy redistribution, thereby preventing damage and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor chip is packaged in the form of a packaged integrated circuit, then the chip can be protected and handled more easily, but the connection pad becomes vulnerable to damage during probe tests and contamination from encapsulant bleeding
Solution Approach 1:
The patent applies preliminary action by forming the first coating layer on the passivation film before packaging, which protrudes to expose the connection bump. This pre-prepared structure protects the connection pad from damage during probe tests and prevents encapsulant bleeding contamination, while maintaining the packaged integrated circuit form factor for easy handling and protection.
2Reliability
If the semiconductor chip is packaged as a packaged integrated circuit, then handling and protection are improved, but the thickness cannot be reduced and redistribution layer formation becomes difficult
Solution Approach 1:
The patent applies preliminary action by pre-forming the first coating layer with an exposed connection bump structure before packaging. This pre-prepared configuration enables easier redistribution layer formation on the active surface while maintaining the packaged integrated circuit form, resolving the contradiction between chip protection and manufacturing ease.
3Adaptability or versatility
If a low melting point metal is used for the connection bump, then the connection structure becomes more flexible and compatible with various conductive materials, but additional material selection constraints are introduced
Solution Approach 1:
The patent applies parameter changes by selecting a low melting point metal (melting point lower than conductive materials) for the connection bump. This parameter change enables the connection bump to be compatible with various conductive materials used in redistribution layers and connection vias, while the melting point constraint becomes a useful parameter for selective material compatibility rather than a limitation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents connection pad damage during probe tests, reduces thickness, and enhances mechanical performance by preventing encapsulant bleeding and allowing for easy formation of a redistribution layer on the active surface of the semiconductor chip.
Implementation Method 1
The first connection bump includes a low melting point metal, the redistribution layer and the connection via include a conductive material, and the low melting point metal has a melting point lower than a melting point of the conductive material
Data Source
AI summary
A semiconductor package includes a semiconductor chip including a body, a connection pad, a passivation film, a first connection bump disposed, and a first coating layer; an encapsulant covering at least a portion of the semiconductor chip; and a connection structure including an insulating layer, a redistribution layer, and a connection via. The first connection bump includes a low melting point metal, the redistribution layer and the connection via include a conductive material, and the low melting point metal has a melting point lower than a melting point of the conductive material.