Semiconductor Package Protection Film for Bump-Safe Thinning
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Solution Overview
Problem
Existing semiconductor packaging processes face challenges in protecting conductive bumps during thinning processes, which can lead to damage and require costly, time-consuming steps like backside grinding tape application and passivation layer formation, and high curing temperatures can melt the bumps.
Innovation Solution
A protection film comprising a dielectric film and a cover film is laminated on the semiconductor wafer, providing protection during thinning and serving as a passivation layer post-removal, with a low curing temperature to prevent bump melting, and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional packaging processes are used without protection film, then the manufacturing process is simpler, but the conductive bumps are damaged during thinning processes
Solution Approach 1:
A protection film is applied to the backside of the semiconductor wafer before the thinning process begins. This preliminary protective measure prevents damage to conductive bumps during subsequent thinning operations, eliminating the need for complex post-protection measures while maintaining process simplicity
Solution Approach 2:
The protection film serves as an intermediary layer between the thinning tool and the conductive bumps on the wafer backside. This intermediate layer absorbs the mechanical stress and prevents direct contact that would cause bump damage, resolving the contradiction between protection and process simplicity
2Reliability
If backside grinding tape and passivation layer formation are applied, then conductive bumps are protected, but the process becomes costly and time-consuming
Solution Approach 1:
The protection film combines multiple functions into a single layer: it provides mechanical protection during thinning, serves as a passivation layer to prevent contamination, and eliminates the need for separate grinding tape and passivation layer formation steps. This merging reduces both time and cost while maintaining bump protection
Solution Approach 2:
The protection film is designed as a multi-functional layer that performs protection during thinning, passivation after thinning, and potential adhesion functions. This universal approach replaces multiple specialized steps (grinding tape application, passivation layer formation) with a single versatile layer, reducing manufacturing cycle time and cost
3Reliability
If high curing temperature is used, then the passivation layer cures effectively, but the conductive bumps melt
Solution Approach 1:
The protection film is formulated with a low curing temperature (below the melting point of conductive bumps) while maintaining effective passivation properties. This parameter change in curing temperature resolves the contradiction by enabling sufficient passivation without reaching temperatures that would melt the bumps
Solution Approach 2:
The protection film uses composite material formulation combining resins, fillers, and curing agents that enable effective passivation at low curing temperatures. This composite approach allows the material to achieve adequate cross-linking and protective properties without requiring high temperatures that would damage conductive bumps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process protects conductive bumps during thinning, avoids costly and time-consuming steps, and reduces material and production costs while ensuring effective encapsulation and electrical connectivity.
Implementation Method 1
A dielectric film is laminated over a semiconductor substrate to cover conductive bumps that are formed over an active side of the semiconductor substrate
Implementation Method 2
with a low curing temperature to prevent bump melting
Data Source
AI summary
A semiconductor package includes a semiconductor device, an encapsulating material encapsulating the semiconductor device, and a redistribution structure disposed over the encapsulating material and the semiconductor device. The semiconductor device includes conductive bumps and a dielectric film encapsulating the conductive bumps, where a material of the dielectric film comprises an epoxy resin and a filler. The conductive bumps are isolated from the encapsulating material by the dielectric film. The redistribution structure is electrically connected to the conductive bumps.