Semiconductor Package Composite Conductive Structures

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Solution Overview

Problem

Current semiconductor packaging technologies face challenges in achieving smaller footprints and enhanced electrical performance, particularly in forming semiconductor packages with improved electrical performance and design flexibility.

Innovation Solution

The method involves forming composite conductive structures with through-substrate vias (TSVs) and anisotropic conductive adhesive layers, which are stacked to create a semiconductor package with a redistribution structure and insulating encapsulation, allowing for finer via pitch interconnections and structural support.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional packaging techniques are used, then manufacturing simplicity is maintained, but electrical performance and design flexibility are limited

Engineering Contradiction:
Improveelectrical performanceVSAvoidpackaging structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The packaging structure is divided into multiple functional layers including support layers, conductive adhesive layers with TSVs, and insulating encapsulation layers. Each layer performs a specific function, allowing complex electrical interconnections while maintaining manufacturability through standardized layer fabrication processes

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from planar interconnections to three-dimensional vertical interconnections using stacked composite conductive structures. Through-substrate vias enable electrical connections through the substrate thickness, adding a vertical dimension that improves electrical performance without increasing footprint area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If larger package footprints are used, then manufacturing is simpler, but device size and integration density increase

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidpackage footprint
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent utilizes vertical stacking of composite conductive structures to achieve complex interconnections in the thickness direction rather than requiring large lateral areas. This three-dimensional arrangement enables fine pitch interconnections without increasing the package footprint, addressing the need for smaller device sizes

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Multiple functional layers are nested within each other, with conductive adhesive layers containing TSVs embedded within insulating encapsulation layers. This nested arrangement maximizes the use of vertical space, enabling complex electrical interconnections within a compact footprint

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of semiconductor packages with improved electrical performance and design flexibility, achieving finer pitch interconnections and structural integrity, thereby addressing the need for smaller and more efficient packaging.

Implementation Method 1

an anisotropic conductive member underlying the support layer and the TMVs

Methodology Applied
Scientific EffectAnisotropic electrical conductivity: Anisotropy

Data Source

PatentUS20230260944A1Semiconductor package and manufacturing method thereof
Publication Date: 2023.08.17 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230260944A1 patent drawing
  • US20230260944A1 patent drawing
  • US20230260944A1 patent drawing

AI summary

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first redistribution structure, a semiconductor die disposed on the first redistribution structure, a stack of composite conductive structures disposed on the first redistribution structure, and an insulating encapsulation disposed on the first redistribution structure and laterally covering the semiconductor die and the stack of composite conductive structures. The stack of composite conductive structures includes a lower tier and an upper tier stacked upon the lower tier. Each of the lower tier and the upper tier includes a support layer, through material vias (TMVs) penetrating through the support layer, and a conductive adhesive member underlying the support layer and the TMVs.