Thermally Enhanced Semiconductor Package With Conductive Film
Solution Overview
Problem
High-performance semiconductor dies generate significant heat, and silicon on insulator (SOI) structures used in flip chip assemblies suffer from harmonic generations and intermodulation distortions, limiting their effectiveness in radio-frequency applications due to unwanted signal generation in other frequency bands.
Innovation Solution
A thermally enhanced semiconductor package design incorporating a thinned flip chip die from an SOI structure with a thermally conductive film and a thermally enhanced mold compound component, where the thermally conductive film has high thermal conductivity (5 w/m·k to 5000 w/m·k) and is deposited over the flip chip die to improve heat dissipation, and the mold compound component fills the cavity formed around the die to enhance thermal connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high-performance semiconductor dies with densely integrated transistors are used, then processing speed and performance are improved, but heat generation increases significantly
Solution Approach 1:
The patent extracts the heat dissipation function from the traditional mold compound by introducing a separate thermally conductive film layer. This film is selectively positioned between the semiconductor die and the mold compound, creating a dedicated thermal management pathway that separates heat conduction from electrical insulation functions.
Solution Approach 2:
The patent employs composite material structure combining different materials with complementary properties: a thermally conductive film (with high thermal conductivity) layered over the semiconductor die, covered by electrically insulating mold compound. This composite structure simultaneously addresses thermal management and electrical isolation requirements.
2Ease of manufacture
If SOI structures are used in flip chip assemblies, then manufacturing cost is reduced, but harmonic generations and intermodulation distortions occur
Solution Approach 1:
The patent introduces an intermediary thermally conductive film layer between the SOI semiconductor die and the mold compound. This intermediate layer serves as a buffer that mitigates the harmful electromagnetic effects while maintaining the cost advantages of SOI structures, without interfering with the electrical functionality.
Solution Approach 2:
The patent applies local quality modification by positioning the thermally conductive film specifically in the region where thermal and electromagnetic management is most critical - directly beneath the semiconductor die - while leaving other regions with different material properties appropriate for their specific functions.
3Reliability
If conventional mold compound is used, then electrical insulation is provided, but thermal conductivity is insufficient
Solution Approach 1:
The patent segments the thermal management function from the electrical insulation function by creating distinct layers: the mold compound maintains electrical insulation while the separate thermally conductive film layer handles heat conduction. This segmentation allows each material to be optimized for its primary function without compromise.
Solution Approach 2:
The patent creates a multi-functional package structure where the mold compound simultaneously provides electrical insulation, mechanical protection, and structural support, while the thermally conductive film adds thermal management capability. This universal approach allows a single package structure to address multiple performance requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively addresses heat dissipation and harmonic distortion issues, providing improved thermal performance and reducing electromagnetic interference, thus enhancing the reliability and efficiency of semiconductor packages.
Implementation Method 1
The thermally conductive film has high thermal conductivity (5 w/m·k to 5000 w/m·k) and is deposited over the flip chip die to improve heat dissipation
Data Source
AI summary
The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the module substrate, a mold compound component, a thermally conductive film, and a thermally enhanced mold compound component. The mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally conductive film resides over at least the upper surface of the thinned flip chip at the bottom of the cavity. The thermally enhanced mold compound component resides over at least a portion of the thermally conductive film to fill the cavity.