Semiconductor Package Assembly With Corner Stiffeners
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Solution Overview
Problem
Package on Package (POP) technology faces challenges in reducing the thickness of semiconductor packages due to increasing input and output connections, leading to significant voltage drops and package height issues, particularly in thin, portable devices.
Innovation Solution
The implementation of a coreless substrate with dielectric layers and conductive vias, along with corner stiffeners, to reduce the thickness of the semiconductor packages and alleviate warpage, while maintaining mechanical and electrical connectivity through solder or conductive connectors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of input and output connections is increased to meet higher density requirements, then the functionality and connectivity of the semiconductor package is improved, but the package thickness increases and voltage drops significantly
Solution Approach 1:
The patent transitions from horizontal routing to vertical stacking architecture, moving connections into the third dimension. Multiple semiconductor packages are stacked vertically with inter-package connections established through vertical vias and conductive structures, enabling high connectivity without increasing lateral package footprint or thickness.
Solution Approach 2:
The patent implements nested packaging where smaller semiconductor packages or dies are embedded within larger package structures. This nesting approach allows multiple functional units to be integrated within a compact volume, achieving high connectivity while maintaining thin profile through hierarchical integration.
2Length of stationary object
If the package thickness is reduced for portable devices, then the portability and compactness is improved, but voltage drops increase and signal transmission efficiency deteriorates
Solution Approach 1:
The patent changes material parameters by employing high-conductivity interconnect materials and optimized via structures to maintain low resistance despite reduced thickness. Conductive materials with superior electrical properties are selected for vertical interconnections, ensuring adequate signal transmission efficiency while achieving thin package profile.
Solution Approach 2:
The patent utilizes composite interconnect structures combining multiple materials with complementary properties. The interconnection system integrates conductive materials, dielectric layers, and structural support elements into a composite architecture that simultaneously achieves thin thickness, low resistance, and mechanical stability.
3Length of stationary object
If the package thickness is reduced, then the compactness for portable devices is improved, but warpage and mechanical stability worsen
Solution Approach 1:
The patent applies local reinforcement strategies by positioning stiffener structures at critical locations within the package, such as corners and edges, rather than uniformly throughout. This localized approach to mechanical reinforcement provides effective warpage control in thin packages while minimizing additional material usage and maintaining compactness.
Solution Approach 2:
The patent employs composite package structures combining materials with different mechanical and thermal properties. The multi-material construction includes substrate materials, die attach materials, encapsulants, and stiffeners that work together to provide thermal management, mechanical support, and warpage control in the thinned package structure.
Data Source
AI summary
A semiconductor package includes a cover, a substrate, at least one semiconductor device and at least one corner stiffener. The cover has at least one corner portion. The substrate is in force communication with the cover. The substrate has at least one corner portion. The semiconductor device is present between the cover and the substrate. The corner stiffener is present on at least one of the corner portion of the cover and the corner portion of the substrate.