Semiconductor Package Connection Structure for Crack Resistance
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Solution Overview
Problem
Current semiconductor packages face challenges in enhancing reliability and durability due to issues with electrical connections and material durability under heat and external forces.
Innovation Solution
A semiconductor package design featuring a connection structure with a lower conductor, an upper conductor, and a dielectric pattern that surrounds the upper conductor, where the dielectric pattern has specific contact surfaces and is curved, along with a molding layer that surrounds the connection structure, to prevent cracking and improve durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional connection structures are used, then device complexity is reduced, but reliability and durability deteriorate due to cracking under heat and external forces
Solution Approach 1:
The connection structure is divided into multiple segments: a lower conductor, an upper conductor, and a dielectric pattern positioned between them. This segmentation allows each component to be optimized independently - the dielectric pattern can be designed with curved surfaces to reduce stress concentration, while the conductors maintain electrical connectivity, thereby improving overall reliability without excessive complexity
Solution Approach 2:
The dielectric pattern incorporates curved surfaces (first and third surfaces) instead of flat surfaces. This curvature design reduces stress concentration points that would otherwise form under heat and external forces, preventing crack initiation and propagation. The curved geometry distributes mechanical stress more evenly, enhancing durability while maintaining a manageable structural complexity
2Object-affected harmful factors
If simple dielectric layering is used, then manufacturing precision is easier to achieve, but resistance to heat and external forces deteriorates
Solution Approach 1:
The dielectric pattern is positioned locally between the upper and lower conductors rather than as a continuous layer, and its surfaces are curved in specific regions (first and third surfaces) to address stress concentration at critical interfaces. This localized quality enhancement provides targeted protection against heat and external forces where needed most, without requiring complex manufacturing across the entire structure
Solution Approach 2:
The connection structure employs a composite arrangement combining dielectric material with curved surfaces and conductive materials. This composite structure leverages the insulating and stress-distributing properties of the dielectric pattern alongside the electrical conductivity of the conductors, creating a multi-functional assembly that resists heat and external forces while maintaining manufacturability
3Strength
If conventional molding is used, then ease of manufacture is improved, but durability under external forces deteriorates
Solution Approach 1:
The dielectric pattern's curved first and third surfaces are designed to complement the molding process by distributing external forces evenly across the molded structure. The curvature allows the molding material to flow and cure more uniformly, reducing voids and weak points, thereby enhancing durability without significantly complicating the molding operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances the semiconductor package's resistance to heat and external forces, reducing the occurrence of cracks and improving durability and electrical properties.
Implementation Method 1
a dielectric pattern that at least partially surrounds the upper conductor
Implementation Method 2
a molding layer that surrounds the connection structure and the second structure
Data Source
AI summary
A semiconductor package includes a first structure that includes an upper connection pattern; a second structure that includes a lower connection pattern; and a connection structure that connects the upper connection pattern of the first structure to the lower connection pattern of the second structure, wherein the connection structure includes a lower conductor connected to the upper connection pattern of the first structure; an upper conductor connected to the lower conductor and the lower connection pattern of the second structure; and a dielectric pattern that at least partially surrounds the upper conductor, and the dielectric pattern includes a first surface in contact with the upper conductor; and a second surface in contact with the lower conductor.


