Semiconductor Package Thermal Structure Using Cu-P Alloy Layers

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Solution Overview

Problem

Conventional thermal dissipation methods in semiconductor structures face issues such as poor thermal management, large size, weight, and reliability problems, particularly in advanced package structures, which hinder their application in industries requiring high reliability like automotive and avionic electronics.

Innovation Solution

Incorporation of a copper-phosphorous alloy (such as Cu3P) into thermal management structures, formed through electroless or electroplating operations, which provides improved thermal conductivity, anti-corrosion, and adhesion, allowing for smaller, thinner, and lighter thermal dissipation solutions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional thermal dissipation methods are used, then thermal management is achieved, but the structure becomes large, heavy, and less reliable

Engineering Contradiction:
ImprovereliabilityVSAvoidweight
Core Design Contradiction:
ReliabilityVSWeight of stationary object

Solution Approach 1:

The patent changes the material parameters by using copper-phosphorous alloy instead of conventional materials, achieving superior thermal conductivity and mechanical properties that enable smaller, lighter, and more reliable thermal management structures

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structure with copper-phosphorous alloy layers combined with adhesion layers and diffusion barrier layers, creating a multi-layer composite that optimizes both thermal performance and structural reliability while reducing weight

Inventive Principle:
Principle #40Composite materials

2Reliability

If conventional thermal dissipation methods are used, then thermal management is achieved, but the structure becomes large in size

Engineering Contradiction:
ImprovereliabilityVSAvoidsize
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The patent changes material parameters by adopting copper-phosphorous alloy with enhanced thermal conductivity, allowing the thermal management structure to achieve the same cooling effect in a smaller footprint, thus improving reliability without requiring large size

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality enhancement by concentrating thermal management functionality in specific high-performance material regions, enabling effective heat dissipation in compact areas rather than requiring uniform large-scale structures

Inventive Principle:
Principle #3Local quality

3Strength

If conventional thermal dissipation methods are used, then thermal management is achieved, but adhesion and anti-corrosion properties are insufficient

Engineering Contradiction:
ImproveadhesionVSAvoidmanufacturing complexity
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The patent uses composite material architecture with multiple functional layers including adhesion layers for strong bonding and diffusion barrier layers for corrosion protection, achieving superior adhesion and anti-corrosion properties while maintaining manufacturability through established deposition techniques

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent introduces intermediary layers such as adhesion layers and diffusion barrier layers that mediate between the copper-phosphorous alloy and substrate, enhancing adhesion strength and corrosion resistance without significantly complicating the manufacturing process

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The copper-phosphorous alloy enhances thermal management by improving heat dissipation, reducing local overheating, and increasing reliability, while being compatible with various electronic device configurations.

Implementation Method 1

a copper-phosphorous alloy layer (1c) over the diffusion barrier layer (1b). The thermal management structure (1) is thermally coupled to a back surface (501B) of the substrate (501)

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

Incorporation of a copper-phosphorous alloy (such as Cu3P) into thermal management structures, formed through electroless or electroplating operations

Methodology Applied
Scientific EffectElectroplating: Electroplating

Data Source

PatentUS12575412B2Semiconductor package structure having thermal management structure
Publication Date: 2026.03.10 LIN CHUN MING
  • US12575412B2 patent drawing
  • US12575412B2 patent drawing
  • US12575412B2 patent drawing

AI summary

The present disclosure provides a package structure. The package structure includes: a first die having a first front surface and a first back surface opposite to the first front surface; a second die having a second front surface and a second back surface opposite to the second front surface, wherein the first back surface faces the first front surface; and a first thermal management structure over the first back surface. The first thermal management structure includes a first copper-phosphorous alloy layer thermally coupled to the first back surface.