Semiconductor Package Cutting Method for Burr-Free Electrode Separation
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Solution Overview
Problem
The existing method for cutting semiconductor package assemblages often results in burr formation at the cut edges of electrodes, leading to potential short-circuits and mounting issues, and requires a deburring process that significantly reduces production efficiency.
Innovation Solution
A two-stage cutting process using a thin rotary cutting blade at a low speed for pre-cutting to form grooves and a standard blade at high speed for main cutting, ensuring minimal burr generation and maintaining efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a rotary cutting blade is used to cut the semiconductor package assemblage, then the cutting efficiency is improved, but burrs are formed at the cut edge of the electrode
Solution Approach 1:
The cutting process is divided into two distinct stages: a first stage using a thin rotary cutting blade to make initial contact and begin separation, and a second stage using a standard thickness rotary cutting blade to complete the cut. This segmentation allows each blade type to perform its optimized function - the thin blade minimizes burr formation during initial cutting, while the standard blade provides high-speed efficient completion of the separation.
Solution Approach 2:
The thin rotary cutting blade performs a preliminary cutting action by making the initial incision and separating the electrode material before the main cutting operation. This preliminary action removes the electrode material in a controlled manner that prevents burr formation, preparing the workpiece for the subsequent high-speed finishing cut by the standard blade.
2Manufacturing precision
If a deburring rotary blade is used to remove burrs, then the cut edge quality is improved, but the production efficiency is markedly decreased
Solution Approach 1:
Instead of viewing the inherent burr-forming tendency of rotary cutting blades as a harmful defect requiring separate correction, the invention converts this characteristic into a benefit by using the thin blade's controlled material removal to actually prevent burr formation in the first place. The thin blade's slower cutting action, which would normally be seen as reducing productivity, is transformed into an advantage that eliminates the need for deburring operations entirely.
3Manufacturing precision
If a thin rotary cutting blade is used for cutting, then burr formation is reduced, but the cutting speed is decreased
Solution Approach 1:
The cutting operation is segmented into two phases with different speed requirements: the first phase uses the thin blade at lower speed to make the initial cut and remove electrode material without forming burrs, while the second phase uses the standard thickness blade at higher speed to complete the separation efficiently. This segmentation allows the system to optimize for precision during the critical initial cutting phase and for speed during the completion phase.
Solution Approach 2:
The thin blade performs the preliminary cutting action at controlled lower speeds to establish the initial separation and remove electrode material in a burr-free manner. This preliminary low-speed cutting creates a clean starting point that enables the subsequent high-speed finishing cut to proceed without risk of burr formation, effectively decoupling the speed-precision tradeoff across two sequential operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively separates semiconductor packages without substantial burr formation, preventing short-circuits and maintaining high production efficiency by carefully managing the cutting process with a thin blade for initial groove formation and a standard blade for final cutting.
Implementation Method 1
a pre-cutting step of removing electrode material to form grooves with a thin rotary cutting blade
Implementation Method 2
a main cutting step of cutting the semiconductor package assemblage with a standard rotary cutting blade
Data Source
AI summary
A separation method by which a semiconductor package assemblage is cut in a predetermined width W1 along streets arranged in a lattice pattern to separate the semiconductor package assemblage into a plurality of semiconductor packages, the semiconductor package assemblage including a metallic frame having metallic die pads of a predetermined thickness placed in a plurality of rectangular regions defined by the streets, and metallic electrodes of a predetermined thickness placed in the streets and extending in the width direction of the streets, one surface of each die pad and one surface of each electrode being exposed on one surface of the semiconductor package assemblage, whereby each electrode has an intermediate portion in the extending direction removed, and has opposite end portions annexed to the adjacent semiconductor packages. The separation method comprises: a pre-cutting step of forming grooves in the one surface of the semiconductor package assemblage by a rotary cutting blade, each groove having a width W3 in each of opposite side edges of a region having a width W2 larger than the predetermined width W1 in the street, where (W2−2×W3)<W1, and each groove having a depth D larger than the thickness of the electrode; and a main cutting step of cutting the semiconductor package assemblage in the predetermined width W1 along the streets by a rotary cutting blade having a thickness corresponding to the predetermined width W1.