Semiconductor Package Structure With Dual Silver Layers Against Delamination
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Solution Overview
Problem
Conventional semiconductor packaging structures experience delamination issues, particularly at the side and top surfaces of the chip, leading to performance deterioration and failure, especially in high-power products.
Innovation Solution
A semiconductor packaging structure incorporating a lead frame, a first thermally conductive layer with smaller silver powder particles, a second thermally conductive layer with larger silver powder particles and resin, and an encapsulation body, where the chip is embedded in a chip groove of the second layer, enhancing bonding strength and thermal conductivity to reduce delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer thermally conductive structure is used, then the manufacturing process is simple, but delamination occurs at the chip surfaces leading to poor reliability
Solution Approach 1:
The patent divides the thermally conductive adhesive layer into two distinct layers: a first thermally conductive adhesive layer with first silver powder particles, and a second thermally conductive adhesive layer with second silver powder particles. This segmentation allows each layer to perform specific functions - the first layer provides strong bonding to the lead frame, while the second layer provides enhanced thermal conductivity and bonding to the chip, thereby preventing delamination without excessive complexity
Solution Approach 2:
The patent employs composite material structures by combining different silver powder particle sizes in separate layers. The first thermally conductive adhesive layer contains first silver powder particles with specific size characteristics, while the second layer contains second silver powder particles with different size characteristics. This composite approach optimizes both bonding strength and thermal conductivity, resolving the contradiction between reliability and structural complexity
2Power
If high power products are used, then the power handling capability is improved, but delamination occurs more frequently causing performance deterioration
Solution Approach 1:
The patent applies local quality by creating regions with different material properties at specific locations. The first thermally conductive adhesive layer is optimized for bonding strength at the lead frame interface, while the second thermally conductive adhesive layer is optimized for thermal conductivity at the chip interface. This localized optimization ensures that high power products maintain reliability by addressing the specific thermal and mechanical demands at each interface
Solution Approach 2:
The patent changes key parameters of the thermally conductive adhesive system by using two different silver powder particle size distributions in two separate layers. This parameter change allows the structure to handle higher power by improving both thermal management and bonding strength, thereby preventing delamination and maintaining product performance under high power conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively reduces delamination at the chip's side and top surfaces, maintaining structural integrity and performance under temperature changes, thereby extending the lifespan and reliability of the semiconductor packaging.
Implementation Method 1
a first thermally conductive layer disposed on a surface of the lead frame and including a plurality of first silver powder particles; a second thermally conductive layer disposed on the first thermally conductive layer and including a resin and a plurality of second silver powder particles
Data Source
AI summary
A semiconductor packaging structure includes a lead frame, a first thermally conductive layer, a second thermally conductive layer, a chip, and an encapsulation body. The first thermally conductive layer is disposed on a surface of the lead frame, and includes a plurality of first silver powder particles. The second thermally conductive layer is disposed on the first thermally conductive layer, and includes a resin and a plurality of second silver powder particles. The first silver powder particles are smaller in size than the second silver powder particles. The chip is disposed on the second thermally conductive layer. A bottom surface of the chip and a portion of a side surface of the chip contact the second thermally conductive layer. The encapsulation body covers the lead frame, the first thermally conductive layer, the second thermally conductive layer, and the chip.