Semiconductor Package Lead Structure for Heat Dissipation and EMI Control
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Solution Overview
Problem
Conventional semiconductor devices face challenges in effectively dissipating heat and suppressing electromagnetic noise due to limitations in the design of lead structures and bonding materials, which affect the impedance and thermal conductivity of the semiconductor package.
Innovation Solution
The semiconductor device incorporates a specific configuration with leads and bonding materials, where the third electrode is bonded to the third lead with a conductive material and the fourth electrode is bonded to the fourth lead with an insulating, high thermal-conductivity paste, creating a higher impedance path to the fourth lead and promoting heat dissipation while suppressing noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional lead structures and bonding materials are used, then the semiconductor device can be manufactured with standard processes, but heat dissipation is ineffective and electromagnetic noise is not suppressed
Solution Approach 1:
The patent applies different bonding materials with different properties to different leads: high thermal conductivity material for heat dissipation leads, and high impedance material for noise suppression leads. This local differentiation of material properties enables simultaneous heat dissipation and electromagnetic noise suppression in different parts of the same device.
Solution Approach 2:
The patent uses composite bonding structures that combine materials with different characteristics (thermal conductivity, electrical impedance) to achieve multiple functions. The bonding materials are selected as composites or combinations that provide both thermal management and electromagnetic interference control properties.
2Temperature
If high thermal conductivity bonding material is used for all leads, then heat dissipation is improved, but electromagnetic noise suppression is compromised
Solution Approach 1:
The patent differentiates the bonding material properties for different leads based on their specific functions. Leads requiring heat dissipation use high thermal conductivity materials, while leads requiring noise suppression use high impedance materials. This localized optimization resolves the contradiction by not applying a single material property universally.
Solution Approach 2:
The bonding material selection is segmented by lead function. Instead of using a uniform bonding material for all leads, the patent divides the bonding approach into separate categories: thermal management bonds and electromagnetic noise suppression bonds, each with optimized material properties for their specific purpose.
3Object-generated harmful factors
If high impedance path is created for noise suppression, then electromagnetic noise is reduced, but thermal conductivity may be compromised
Solution Approach 1:
The patent applies high impedance bonding materials only to specific leads where noise suppression is the priority function, while other leads maintain high thermal conductivity materials for heat dissipation. This localized application ensures that noise suppression does not compromise overall thermal management capability.
Solution Approach 2:
The bonding material selection is segmented by functional requirement. Leads are categorized into those prioritizing thermal conduction and those prioritizing electrical impedance for noise suppression. This segmentation allows each lead to be optimized for its primary function without negatively impacting the other function in the system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances heat dissipation and reduces electromagnetic noise by controlling current flow and thermal conductivity, making the semiconductor device more efficient and stable.
Implementation Method 1
the fourth electrode is bonded to the fourth lead with an insulating, high thermal-conductivity paste
Implementation Method 2
the fourth electrode is bonded to the fourth lead with an insulating, high thermal-conductivity paste
Data Source
AI summary
A semiconductor device includes a semiconductor element including first, second and third electrodes, where energization of the first and third electrodes is controlled by voltage application to the second electrode. The semiconductor device further includes a first lead connected to the first electrode, a second lead connected to the second electrode, a third lead connected to the third electrode, a fourth lead, and a sealing resin covering at least the semiconductor element. The third lead is exposed from the sealing resin to a second side in a thickness direction. The fourth lead is bonded to the semiconductor element and exposed from the sealing resin to the second side in the thickness direction. The semiconductor element includes a switching function unit. The impedance of a path from the switching function unit to the fourth lead is larger than that of a path from the switching function unit to the third lead.