Semiconductor Package Vertical Posts for Fine-Pitch Wiring
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Solution Overview
Problem
Existing semiconductor packages face limitations in wiring design flexibility and fine pitch capabilities, which affect their reliability and durability.
Innovation Solution
A semiconductor package device with vertical structures featuring different diameter posts and bonding pads, allowing for increased design freedom and fine pitches, achieved through a fabrication process that utilizes a seed layer for forming posts and bonding pads, and an etching process to reduce processing steps and achieve small diameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional semiconductor package structures are used, then manufacturing simplicity is maintained, but wiring design flexibility and fine pitch capabilities are limited
Solution Approach 1:
The vertical structure is divided into multiple segments: a first post with first diameter, a second post with second diameter on the first post, and a bonding pad with third diameter on the second post. This segmentation allows each component to be optimized independently for wiring design flexibility while maintaining manufacturability through standardized fabrication processes
Solution Approach 2:
The invention transitions from conventional planar wiring designs to three-dimensional vertical structures. By stacking posts of different diameters vertically, the patent enables fine pitch capabilities and wiring design flexibility that cannot be achieved with traditional two-dimensional layouts, effectively utilizing the vertical dimension for enhanced adaptability
2Manufacturing precision
If posts with uniform diameters are used, then manufacturing simplicity is maintained, but fine pitch capabilities are reduced
Solution Approach 1:
Different portions of the vertical structure have different diameters tailored to their specific functions: the first post has a larger diameter for structural support, the second post has a reduced diameter for fine pitch positioning, and the bonding pad has an optimized diameter for electrical connection. This local quality optimization achieves fine pitch capability without proportionally increasing overall manufacturing complexity
Solution Approach 2:
A seed layer is formed first, followed by selective etching to create the multi-diameter post structure. This preliminary action of forming the seed layer and using it as an etching mask enables the complex multi-diameter structure to be manufactured through a systematic, controlled process rather than requiring multiple separate fabrication steps
3Manufacturing precision
If multiple processing steps are used to create different diameter posts, then structural precision is improved, but manufacturing efficiency decreases
Solution Approach 1:
The formation of the first post, second post, and bonding pad with different diameters is merged into a single integrated vertical structure fabricated through one etching process using the seed layer as mask. This merging of multiple structural elements into one fabrication step maintains post diameter precision while significantly improving manufacturing efficiency compared to creating each component separately
4Adaptability or versatility
If vertical structures with varying diameters are implemented, then wiring design freedom is enhanced, but device complexity increases
Solution Approach 1:
The vertical structure with varying diameters serves multiple functions simultaneously: the first post provides structural support, the second post enables fine pitch positioning, and the bonding pad facilitates electrical connection. This multi-functionality within a single integrated structure enhances wiring design freedom without proportionally increasing device complexity
Data Source
AI summary
Disclosed is a semiconductor package device comprising a lower redistribution substrate, a first semiconductor chip on the lower redistribution substrate, vertical structures on the lower redistribution substrate, and a first molding member on the lower redistribution substrate and on the first semiconductor chip and the vertical structures. The vertical structure includes a first post having a first diameter, a second post on the first post and having a second diameter, and a bonding pad on the second post opposite the first post and having a third diameter. The first, second, and third diameters are different from each other. The third diameter is greater than the second diameter.