Semiconductor Package Heat Dissipation Reinforcements

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Solution Overview

Problem

As semiconductor packages become lightweight, thin, miniaturized, and high-speed, they face challenges with heat dissipation, leading to thermal stress and potential warpage, which can slow down operation and affect product reliability due to increased power consumption and temperature within the package.

Innovation Solution

Incorporating metal reinforcing materials with high thermal conductivity into the epoxy molding compound (EMC) to form elongated heat dissipation reinforcements that extend along the lateral and upper surfaces of the semiconductor chip, enhancing heat transmission and discharge.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor packages are made lightweight, thin, and miniaturized to increase integration density, then more devices can be integrated in a given area, but heat dissipation becomes insufficient leading to increased temperature and thermal stress

Engineering Contradiction:
Improvepackage sizeVSAvoidpackage temperature
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent applies composite materials by integrating metal reinforcing materials (such as aluminum or copper) into the epoxy molding compound (EMC) to form a composite encapsulant. This composite structure combines the protective and insulating properties of EMC with the high thermal conductivity of metal, enabling effective heat dissipation in miniaturized packages where space for separate heat sinks is limited.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The metal reinforcing materials act as thermal intermediaries within the encapsulant, creating thermal conduction pathways that bridge the heat generation sources (semiconductor devices) and the package exterior. These metal reinforcements serve as intermediate heat transfer media, conducting heat away from critical areas through the molding compound to external surfaces for dissipation.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If power consumption increases to achieve high-speed and multifunctional performance, then operational capabilities improve, but heat generation increases causing thermal stress and warpage

Engineering Contradiction:
Improvepower consumptionVSAvoidproduct reliability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The composite encapsulant with metal reinforcements provides continuous thermal conduction pathways throughout the package structure, enabling high-power devices to operate reliably by continuously conducting heat away from active areas. The metal network within the EMC creates multiple parallel heat flow paths, preventing thermal bottlenecks even under high power conditions.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the thermal conductivity parameter of the encapsulant material by incorporating metal particles, flakes, or fibers into the EMC. This parameter modification transforms the encapsulant from a thermal insulator to a thermal conductor, fundamentally altering the heat dissipation capability of the package structure to support high-power operation.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If epoxy molding compound is used to mold the semiconductor chip and wires, then protection and insulation are provided, but thermal conductivity is insufficient leading to poor heat dissipation

Engineering Contradiction:
Improvechip protectionVSAvoidheat dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent creates a composite encapsulant by combining epoxy molding compound with metal reinforcing materials (such as aluminum powder, copper flakes, or metal fibers). This composite structure maintains the protective, insulating, and structural properties of EMC while introducing high thermal conductivity through the metal components, achieving both chip protection and effective heat dissipation simultaneously.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The metal reinforcing materials are distributed throughout the encapsulant at strategic locations to create localized thermal conduction pathways. The concentration, shape, and orientation of metal particles are optimized in different regions to direct heat flow from high-heat-generation areas to external surfaces, providing localized thermal management where most needed while maintaining overall package integrity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively improves the thermal characteristics of the semiconductor package by increasing thermal conductivity, allowing for efficient heat dissipation and reducing thermal stress, thereby enhancing the reliability and performance of the package.

Implementation Method 1

metal reinforcing materials having high thermal conductivity... heat generated in the semiconductor chip and each wire may be effectively transmitted and discharged to the outside

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240194563A1Semiconductor package and method for fabricating same
Publication Date: 2024.06.13 SAMSUNG ELECTRONICS CO LTD
  • US20240194563A1 patent drawing
  • US20240194563A1 patent drawing
  • US20240194563A1 patent drawing

AI summary

A semiconductor package includes: a substrate; a semiconductor chip provided on the substrate; a plurality of heat dissipation reinforcements provided on the substrate; and an encapsulant, on the substrate, molding the semiconductor chip and the plurality of heat dissipation reinforcements. Each of the plurality of heat dissipation reinforcements has an elongated shape, and extends along lateral surfaces and an upper surface of the semiconductor chip at a predetermined interval from the semiconductor chip.