Semiconductor Package Heat Dissipation Layer for Localized Hot Spots
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Solution Overview
Problem
Existing semiconductor packages face challenges with localized heat dissipation due to the lack of effective heat dissipation paths, leading to compromised performance in terms of heat management and electrical efficiency.
Innovation Solution
Incorporating a heat dissipation layer with high thermal conductivity materials, such as high-k dielectric materials, water, carbon nanotubes, or metals, between semiconductor dies and a heat sink to spread heat generated by active devices, allowing for efficient lateral heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional semiconductor packaging is used without dedicated heat dissipation paths, then device integration density can be improved, but localized heat spots accumulate and compromise performance
Solution Approach 1:
The patent introduces a heat dissipation layer as an intermediary component between the semiconductor die and the heat sink. This layer is specifically designed with high thermal conductivity to facilitate heat transfer from the die to the heat sink, thereby resolving the contradiction between maintaining high integration density and managing localized heat accumulation.
Solution Approach 2:
The patent changes the thermal conductivity parameter of the packaging structure by incorporating materials with high thermal conductivity (such as diamond, cubic boron nitride, or metal interconnects) into the heat dissipation layer. This parameter change enables efficient heat dissipation while maintaining the compact packaging structure necessary for high integration density.
2Temperature
If heat dissipation structures are added to semiconductor packages, then heat management performance improves, but device complexity increases
Solution Approach 1:
The heat dissipation layer is designed to serve multiple functions simultaneously: it acts as a thermal management component, an electrical interconnect layer, and a structural support element. By making the heat dissipation structures multi-functional, the patent improves heat dissipation efficiency without proportionally increasing package structure complexity.
Solution Approach 2:
The patent merges the heat dissipation function with existing packaging structures by integrating the heat dissipation layer into the interconnect structure. This combining approach allows heat management to be achieved using materials and structures that are already part of the packaging system, thereby minimizing the increase in device complexity.
3Speed
If high thermal conductivity materials are used in heat dissipation layer, then heat dissipation speed improves, but manufacturing complexity increases
Solution Approach 1:
The patent applies high thermal conductivity materials locally in the heat dissipation layer rather than throughout the entire package. Specifically, materials like diamond or cubic boron nitride are used in regions where heat dissipation is most critical (directly beneath hot spots), while other areas use standard packaging materials. This local quality approach improves heat dissipation speed while minimizing manufacturing complexity by limiting the use of difficult-to-manufacture materials to specific locations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly improves the overall performance of semiconductor packages by quickly dissipating heat, reducing localized heat spots, and maintaining electrical performance without compromising it.
Implementation Method 1
Incorporating a heat dissipation layer with high thermal conductivity materials, such as high-k dielectric materials, water, carbon nanotubes, or metals, between semiconductor dies and a heat sink to spread heat generated by active devices
Data Source
AI summary
A semiconductor package is disclosed. The semiconductor package includes a package substrate. The semiconductor package includes a semiconductor die having a first surface attached to the package substrate and a second surface. The semiconductor package includes a heat sink attached to the second surface of the semiconductor die. The semiconductor package includes a heat dissipation layer interposed between the heat sink and the semiconductor die. The heat dissipation layer comprises one or more high-k dielectric materials.