Semiconductor Package Insulation Using Segmented Resin With High CTI Material
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Solution Overview
Problem
Semiconductor devices face challenges in preventing short-circuiting between high and low potential sites due to inadequate creepage distances and insulating performance degradation over time.
Innovation Solution
The semiconductor device design incorporates specific creepage distance relationships and the use of materials with varying comparative tracking indexes to ensure longer creepage distances between high and low potential sites, reducing the likelihood of short-circuiting and incorporating a resin part that covers switching elements and terminals to enhance insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard encapsulant resin material is used to seal semiconductor elements, then manufacturing cost is reduced and ease of manufacture is improved, but insulating performance degrades over time and short-circuiting risk increases
Solution Approach 1:
The resin part is segmented into multiple regions with different materials: a first region with standard encapsulant resin material and a second region with additional material having higher CTI. This segmentation allows the patent to maintain ease of manufacture for the majority of the sealing while enhancing insulating performance in specific critical areas where terminals are exposed, thus resolving the contradiction between manufacturing ease and reliability.
Solution Approach 2:
The patent applies local quality by using different material properties in different regions of the resin part. The additional material with higher CTI is specifically placed in the second region where enhanced insulating performance is needed, while the first region uses standard material. This localized enhancement resolves the contradiction by improving reliability only where necessary without compromising overall manufacturing ease.
2Reliability
If creepage distance between high and low potential terminals is increased, then short-circuiting prevention is improved, but device area increases
Solution Approach 1:
The patent changes the material parameter (CTI) in the second region to enhance insulating performance. By using additional material with higher CTI, the patent achieves better short-circuiting prevention without needing to proportionally increase the creepage distance, thus mitigating the area increase while maintaining reliability.
Solution Approach 2:
The patent uses composite materials by combining standard encapsulant resin material with additional material having higher CTI. This composite approach allows the resin part to achieve both adequate creepage distance and enhanced insulating performance, preventing short-circuiting without excessive area increase.
3Reliability
If material with higher comparative tracking index (CTI) is used in critical regions, then insulating performance is improved, but manufacturing complexity increases
Solution Approach 1:
The resin part is divided into a first region and a second region, where only the second region uses additional material with higher CTI. This segmentation strategy improves insulating performance in critical areas while keeping the majority of the structure simple and easy to manufacture, thus resolving the contradiction between reliability and manufacturing complexity.
Solution Approach 2:
The patent applies local quality by using additional material with higher CTI only in the second region where enhanced insulating performance is needed. This localized approach improves reliability without significantly increasing overall manufacturing complexity, as the first region continues to use standard material and processes.
Data Source
AI summary
A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.