Semiconductor Package Interconnection Layout for High-Density I/O
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Solution Overview
Problem
The increasing density of input/output (I/O) pads on semiconductor dies complicates packaging, adversely affecting yield due to the difficulty in integrating more circuits into smaller areas.
Innovation Solution
A semiconductor package device is designed with a first dielectric layer, a first interconnection layer, and a second dielectric layer, where the interconnection layers are embedded and connected within the dielectric layers, reducing the need for expensive interposers with fine-pitch redistribution structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the density of input/output pads is increased to integrate more circuits into smaller areas, then circuit integration capability is improved, but packaging difficulty increases and yield decreases
Solution Approach 1:
The patent transitions from planar 2D pad layout to 3D vertical interconnection structure. Multiple interconnection layers are stacked vertically with dielectric layers in between, enabling three-dimensional routing of electrical signals. This dimensional transition allows more I/O connections to be packed into a smaller footprint area without increasing packaging complexity proportionally.
Solution Approach 2:
The patent implements nested interconnection structures where conductive vias penetrate through dielectric layers to connect different interconnection layers. The vias are nested within the dielectric matrix, creating a compact hierarchical structure. This nesting approach allows multiple connection levels to be integrated vertically, increasing I/O density without proportionally increasing package volume.
2Reliability
If interposers with fine-pitch redistribution structures are used to achieve high-density I/O connections, then electrical connectivity is improved, but manufacturing cost increases
Solution Approach 1:
The patent divides the interconnection function into multiple discrete layers (first interconnection layer, second interconnection layer, etc.) separated by dielectric layers. Each layer performs specific routing functions, and the segmented structure allows independent fabrication and optimization of each interconnection level. This segmentation eliminates the need for expensive monolithic fine-pitch interposer structures while maintaining electrical connectivity.
Solution Approach 2:
The patent changes the structural parameters of the interconnection system by using thick dielectric layers with embedded conductive vias instead of thin fine-pitch redistribution layers. This parameter change from 2D planar routing to 3D vertical routing with larger via dimensions reduces manufacturing complexity and cost while achieving the required electrical connectivity for high-density I/O applications.
Data Source
AI summary
A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.