Semiconductor Package Layout for Vertical Hot Spot Heat Dissipation
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Solution Overview
Problem
Current semiconductor packages face challenges in effectively dissipating heat generated by high-power components like CPUs and GPUs, leading to thermal management issues and reduced operational reliability.
Innovation Solution
A semiconductor package design that includes a connection chip with a thermally conductive material, vertically aligned with a hot spot on a first semiconductor chip, connecting it to a second semiconductor chip, allowing for efficient heat transfer and dissipation, while also exposing the top surfaces of the chips to enhance cooling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-power components (CPU, GPU) are integrated into semiconductor chips to increase processing power, then computational capability is improved, but heat generation increases leading to thermal management issues
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional vertical heat transfer by stacking semiconductor chips with thermal interface materials between them. Heat is conducted vertically through the stacked structure to heat dissipation substrates, utilizing the third dimension (vertical direction) to enhance thermal management while maintaining high computational power in limited horizontal space.
2Volume of moving object
If multiple semiconductor chips are stacked closely to reduce package size, then miniaturization is achieved, but heat dissipation becomes more difficult
Solution Approach 1:
The patent divides the semiconductor package into multiple discrete stacked chips (first semiconductor chip, second semiconductor chip, third semiconductor chip) separated by thermal interface materials. This segmentation allows each chip to have dedicated thermal pathways and heat dissipation interfaces, enabling effective heat management in a compact vertical arrangement rather than a single monolithic structure.
Solution Approach 2:
Thermal interface materials are introduced as intermediary layers between stacked semiconductor chips. These materials facilitate efficient thermal coupling and heat transfer between adjacent chips, enabling effective heat dissipation through the vertical stack while maintaining close proximity for miniaturization. The thermal interface materials act as mediators that optimize thermal contact without requiring direct chip-to-chip contact.
3Ease of manufacture
If conventional bonding methods are used to connect stacked chips, then manufacturing simplicity is maintained, but thermal conductivity is insufficient for effective heat dissipation
Solution Approach 1:
The patent employs composite thermal interface materials that combine high thermal conductivity properties with manageable manufacturing characteristics. These composite materials enable superior heat transfer between stacked chips compared to conventional bonding methods, while still being applicable through established semiconductor packaging processes. The composite nature of these materials provides both thermal performance and manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively transfers and dissipates heat from the hot spot, improving thermal characteristics and operational reliability of the semiconductor package by allowing for quicker heat dissipation.
Implementation Method 1
A semiconductor package may include a lower structure, a first semiconductor chip on the lower structure, the first semiconductor chip including a hot spot, a second semiconductor chip horizontally spaced apart from the first semiconductor chip on the lower structure, and a connection chip in the lower structure and connecting the first and second semiconductor chips to each other. The hot spot may vertically overlap the connection chip.
Data Source
AI summary
A semiconductor package may include a lower structure, a first semiconductor chip on the lower structure, the first semiconductor chip including a hot spot, a second semiconductor chip horizontally spaced apart from the first semiconductor chip on the lower structure, and a connection chip in the lower structure and connecting the first and second semiconductor chips to each other. The hot spot may vertically overlap the connection chip.


