Semiconductor Package Heat Path for Localized Hot Spots

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Solution Overview

Problem

As semiconductor chips become more integrated and smaller, heat density increases, leading to localized hot spots that degrade performance and reliability, necessitating improved heat dissipation technologies.

Innovation Solution

A semiconductor package design incorporating a substrate with interconnections, a semiconductor chip, heat transfer material layers, and a heat transfer conductor with a base and connection portion to efficiently dissipate heat from hot spots, while maintaining electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor chips are reduced in size and have higher degree of integration, then performance and weight are improved, but heat density increases and hot spots are formed

Engineering Contradiction:
Improveintegration densityVSAvoidheat density
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent applies local quality by placing heat transfer material layers specifically at locations corresponding to hot spots on the semiconductor chip. The upper heat transfer material layer is positioned only over regions where heat is generated, while the lower heat transfer material layer is disposed on the substrate at corresponding locations. This localized approach allows effective heat dissipation from critical areas without requiring uniform heat management across the entire chip structure, thus managing heat density while maintaining high integration.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent introduces heat transfer material layers as intermediary substances between the semiconductor chip and the substrate to facilitate heat transfer. These layers act as thermal mediators that conduct heat away from the chip's hot spots through the substrate to external heat sinks. The heat transfer material layers have thermal conductivity properties that enable efficient heat transfer, resolving the contradiction by providing a thermal pathway without affecting the chip's integrated structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If heat transfer material layers and heat transfer conductor are added, then heat dissipation is improved, but device complexity increases

Engineering Contradiction:
Improveheat dissipationVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent merges the heat transfer conductor with the substrate structure, integrating the thermal management function into the existing package architecture. The heat transfer conductor extends from the substrate upward to contact the lower heat transfer material layer, combining structural support and heat conduction functions in a single element. This merging approach improves heat dissipation while minimizing the addition of separate components, thus controlling device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The substrate serves multiple functions: it provides mechanical support for the semiconductor chip, electrical interconnections through traces, and thermal management through the integrated heat transfer conductor. The heat transfer conductor simultaneously acts as a structural element and a thermal pathway, while the heat transfer material layers provide both thermal conduction and interface bonding. This multi-functionality reduces the need for additional dedicated components, improving heat dissipation without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances heat dissipation properties and manufacturing simplicity, improving the performance and reliability of semiconductor packages by effectively managing heat from localized hot spots.

Implementation Method 1

a heat transfer conductor including a base portion on the lower heat transfer material layer, and a connection portion extending from the base portion in a second direction, intersecting the first direction, the connection portion in contact with the upper heat transfer material layer

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a lower heat transfer material layer disposed on the substrate and adjacent to at least one side of the semiconductor chip, the lower heat transfer material layer extending in a first direction along the substrate, an upper heat transfer material layer disposed on the semiconductor chip, the upper heat transfer material layer vertically overlapping the at least one hot spot

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250336750A1Semiconductor package
Publication Date: 2025.10.30 SAMSUNG ELECTRONICS CO LTD
  • US20250336750A1 patent drawing
  • US20250336750A1 patent drawing
  • US20250336750A1 patent drawing

AI summary

A semiconductor package includes a substrate including an interconnection, a semiconductor chip disposed on the substrate and including chip pads and at least one hot spot, a lower heat transfer material layer on at least one side of the semiconductor chip and extending in a first direction, an upper heat transfer material layer on the semiconductor chip and vertically overlapping the at least one hot spot, a heat transfer conductor including a base portion on the lower heat transfer material and a connection portion extending in a second direction, a molded layer covering the semiconductor chip and the heat transfer conductor, and external connection bumps below the substrate. A first area of the base portion of the heat transfer conductor in contact with the lower heat transfer material is equal to or greater than a second area of the connection portion in contact with the upper heat transfer material.