Semiconductor Package Thermal Dissipation via Interposer Adhesive
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Solution Overview
Problem
Existing semiconductor package structures inadequately address thermal dissipation, leading to increased temperatures that can damage semiconductor components and affect performance.
Innovation Solution
The semiconductor package structure includes a semiconductor die, an interposer, an adhesive layer, and a molding material, where the interposer is bonded to the semiconductor die with an adhesive layer of higher thermal conductivity, and the semiconductor die is thickened to shorten the thermal dissipation path, reducing voids and improving heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional adhesive layers are used to bond the semiconductor die to the interposer, then the package structure is simple to manufacture, but thermal dissipation efficiency is insufficient leading to increased temperatures
Solution Approach 1:
The patent changes the thermal conductivity parameter of the adhesive layer by selecting materials with higher thermal conductivity (e.g., diamond-like carbon, metal-containing adhesives) to improve heat transfer from the semiconductor die to the interposer, directly addressing the thermal dissipation inefficiency of conventional adhesive layers
Solution Approach 2:
The patent employs composite adhesive materials that combine high thermal conductivity with adequate bonding strength, such as diamond-like carbon coatings or metal-particle-enhanced adhesives, achieving both improved thermal dissipation and manufacturability
2Temperature
If the semiconductor die is made thinner to reduce package height, then the device size is reduced, but the thermal dissipation path length increases reducing heat transfer efficiency
Solution Approach 1:
The patent introduces an interposer as an intermediary component with high thermal conductivity that bridges the semiconductor die and the substrate, providing an alternative thermal pathway that bypasses the limitation of thin die design and improves overall heat transfer efficiency
Solution Approach 2:
The patent transitions thermal management from a vertical one-dimensional path through the die thickness to a two-dimensional or three-dimensional heat spreader approach using the interposer's lateral thermal conduction capabilities to dissipate heat over a larger area
3Stability of the object's composition
If conventional packaging materials are used to fill voids, then the manufacturing process is simple, but warpage occurs affecting structural stability
Solution Approach 1:
The patent modifies the thermal and mechanical parameters of the packaging materials (molding compound, underfill) to match the thermal expansion coefficients and moduli of the surrounding components, reducing thermal stress and preventing warpage while maintaining manufacturing simplicity
Solution Approach 2:
The patent applies different material properties to different regions of the package structure, using materials with specific thermal conductivity and mechanical properties in critical areas (e.g., near the die attach interface) to locally manage thermal stress and prevent warpage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances thermal dissipation efficiency, improves performance by reducing warpage and voids, and provides better structural support, effectively managing heat generated by the semiconductor die.
Implementation Method 1
The adhesive layer connects the semiconductor die and the interposer... adhesive layer of higher thermal conductivity... improves heat transfer
Implementation Method 2
the semiconductor die is thickened to shorten the thermal dissipation path, reducing voids and improving heat transfer
Implementation Method 3
The molding material surrounds the semiconductor die and the adhesive layer
Data Source
AI summary
A semiconductor package structure includes a package substrate, a semiconductor die, an interposer, an adhesive layer, and a molding material. The semiconductor die is disposed over the package substrate. The interposer is disposed over the semiconductor die. The adhesive layer connects the semiconductor die and the interposer. The molding material surrounds the semiconductor die and the adhesive layer.