Semiconductor Package Alignment Using Vernier Patterns and IR Feedback

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Solution Overview

Problem

Existing semiconductor device bonding processes face challenges in achieving precise alignment and efficient yield rates due to misalignment during the bonding process, which can lead to defects and increased production time.

Innovation Solution

The use of a flip chip bonding apparatus equipped with an infrared inspection device that detects offset values through vernier scale patterns on semiconductor devices, allowing real-time alignment adjustments and initial defect inspection to improve alignment precision and yield rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional bonding processes are used, then manufacturing simplicity is maintained, but alignment precision deteriorates due to misalignment during bonding

Engineering Contradiction:
Improvealignment precisionVSAvoidbonding process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by performing alignment inspection using vernier scale patterns before the actual bonding process. The offset value is detected and recorded in advance, allowing alignment adjustments to be made prior to bonding, thereby ensuring high alignment precision without complicating the bonding process itself.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by using an infrared inspection device to detect offset values between workpieces through vernier scale patterns. This real-time feedback on alignment status allows for immediate adjustments, ensuring precise alignment while maintaining a relatively simple bonding process through controlled iterations.

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If alignment inspection is performed during bonding, then alignment precision is improved, but production time increases due to additional inspection steps

Engineering Contradiction:
Improvealignment precisionVSAvoidproduction time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent replaces complex mechanical alignment systems with an optical inspection system using infrared devices and vernier scale patterns. This substitution allows for rapid, non-contact alignment verification during bonding, improving alignment precision while minimizing additional time consumption compared to traditional mechanical alignment methods.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the inspection parameter from general visual inspection to specific infrared detection of vernier scale patterns. This parameter change enables faster, more precise alignment measurement during bonding, improving alignment precision while reducing the time required for inspection through automated optical detection.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If real-time alignment adjustment is implemented, then alignment precision is improved, but device complexity increases due to additional control mechanisms

Engineering Contradiction:
Improvealignment precisionVSAvoidcontrol system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies self-service by enabling the system to automatically detect offset values through vernier scale patterns and perform alignment adjustments without requiring complex external control mechanisms. The infrared inspection device and processing system work together in a self-contained manner, improving alignment precision while avoiding excessive device complexity.

Inventive Principle:
Principle #25Self-service

4Manufacturing precision

If offset detection is performed, then alignment precision is improved, but manufacturing complexity increases due to additional inspection equipment

Engineering Contradiction:
Improvealignment precisionVSAvoidinspection equipment complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies universality by designing the infrared inspection device to serve multiple functions: it not only detects offset values through vernier scale patterns for alignment precision but also performs initial defect inspection. This multi-functionality improves alignment precision while avoiding the need for separate specialized equipment, thereby limiting the increase in manufacturing complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables precise alignment and reduces production time by providing real-time feedback for alignment adjustments, enhancing the efficiency and yield rate of the bonding process.

Implementation Method 1

an infrared inspection device that detects offset values through vernier scale patterns on semiconductor devices

Methodology Applied
Scientific EffectInfrared radiation detection: Infrared Radiation

Data Source

PatentUS12381191B2Semiconductor package, method of bonding workpieces and method of manufacturing semiconductor package
Publication Date: 2025.08.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12381191B2 patent drawing
  • US12381191B2 patent drawing
  • US12381191B2 patent drawing

AI summary

A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first alignment pattern having a plurality of first scale patterns arranged in a first direction. The second semiconductor device is mounted over the first semiconductor device and includes a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.