Semiconductor Package IR Reflection Layer for Data Retention
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Solution Overview
Problem
The infrared reflow mounting process for semiconductor packages can degrade the retention property of written data on semiconductor chips due to excessive radiation heat, leading to reliability issues.
Innovation Solution
Incorporating an infrared reflection layer, such as aluminum, aluminum oxide, or titanium oxide, on the upper surface of the semiconductor package or within the sealing resin to reflect infrared radiation and reduce heat absorption, thereby minimizing the temperature increase of the semiconductor chip during mounting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If infrared reflow mounting process is used for mounting semiconductor packages, then mounting efficiency is improved, but radiation heat degrades data retention property on semiconductor chips
Solution Approach 1:
The patent applies the 'Blessing in disguise' principle by converting the harmful infrared radiation heat into a beneficial reflective shield. An infrared reflection layer containing aluminum oxide or titanium oxide is formed on the upper surface of the sealing resin, which reflects infrared radiation away from the semiconductor chip. This transforms the previously harmful thermal radiation during reflow mounting into a protective mechanism that preserves data retention while allowing efficient mounting processes to continue.
2Reliability
If infrared reflection layer is added to reduce radiation heat, then data retention is improved, but device structure becomes more complex
Solution Approach 1:
The patent applies the 'Composite materials' principle by incorporating infrared-reflecting materials (aluminum oxide or titanium oxide) into the existing sealing resin structure. Rather than adding a separate complex component, the reflection layer is integrated as a composite material layer within the sealing resin, maintaining structural simplicity while achieving the desired infrared reflection function to protect data retention.
3Temperature
If infrared reflection layer is formed on sealing resin, then temperature increase of semiconductor chip is reduced, but manufacturing process becomes more complex
Solution Approach 1:
The patent applies the 'Parameter changes' principle by modifying the chemical composition parameters of the sealing resin to include infrared-reflecting compounds (aluminum oxide or titanium oxide). This is achieved by adding specific compounds to the resin formulation before molding, allowing the infrared reflection function to be obtained through material composition changes rather than additional manufacturing steps. The resin is then cured through conventional UV or thermal processes, maintaining ease of manufacture while achieving temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the amount of radiation heat reaching the semiconductor chip, preventing data degradation and improving the reliability of written data by controlling the temperature increase, while still allowing for efficient mounting of the semiconductor package.
Implementation Method 1
an infrared reflection layer containing any of aluminum, aluminum oxide, and titanium oxide... to reflect infrared radiation and reduce heat absorption
Data Source
AI summary
A semiconductor package of an embodiment includes a wiring substrate, a semiconductor chip provided on an upper surface of the wiring substrate, a sealing resin covering surfaces of the wiring substrate and the semiconductor chip, an infrared reflection layer containing any of aluminum, aluminum oxide, and titanium oxide, and an external terminal provided on a lower surface of the wiring substrate. The wiring substrate is electrically connectable with a printed wiring board through the external terminal. The infrared reflection layer is provided to the sealing resin on an upper side of a surface of the semiconductor chip on a side opposite to an upper surface of the wiring substrate.