Multi-Chip Semiconductor Package Isolation for Dielectric Breakdown
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Solution Overview
Problem
In semiconductor devices with multiple semiconductor elements, the difference in power supply voltages between the controller and gate driver leads to increased risk of dielectric breakdown of the insulating element, which compromises the dielectric strength and reliability of the device.
Innovation Solution
Incorporating an insulating substrate between the die pad and the insulating element, along with bonding layers, to hinder the movement of charged carriers and reduce potential differences, thereby enhancing the dielectric strength and preventing dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating element is interposed between the conduction path to the controller and the conduction path to the gate driver to improve dielectric strength, then the dielectric strength is improved, but the risk of dielectric breakdown increases when power supply voltages are significantly different
Solution Approach 1:
The patent introduces an insulating substrate as an intermediary component between the die pad and the insulating element. This additional insulating layer acts as a mediator that further isolates the two conduction paths with different power supply voltages, thereby reducing the risk of dielectric breakdown while maintaining the necessary dielectric strength for proper insulation.
Solution Approach 2:
The patent employs a composite insulation structure consisting of multiple insulating materials: the insulating element itself and the insulating substrate. This composite approach combines different insulating properties to achieve both adequate dielectric strength for signal isolation and sufficient voltage withstand capability to prevent breakdown under significant voltage differences.
2Adaptability or versatility
If multiple semiconductor elements are mounted in a single package to integrate controller and gate driver, then device integration is improved, but voltage difference between conduction paths increases dielectric breakdown risk
Solution Approach 1:
The patent segments the internal structure by introducing an insulating substrate that creates distinct electrical zones within the integrated package. This segmentation separates the controller conduction path from the gate driver conduction path, allowing each to operate at its required voltage level while maintaining physical integration within a single package.
Solution Approach 2:
The insulating substrate serves as a mediator structure that enables coexistence of different voltage domains within the integrated package. It provides the necessary electrical isolation between elements operating at different potentials, thereby supporting device integration while mitigating the reliability concerns arising from voltage differences.
Data Source
AI summary
A semiconductor device includes a plurality of conductive members including a die pad, a first semiconductor element and a second semiconductor element each located on the die pad, an insulating element electrically connected to the first semiconductor element and the second semiconductor element and insulating the first semiconductor element and the second semiconductor element from each other, and an insulating substrate interposed between the die pad and the insulating element and bonded to the die pad. The insulating element is bonded to the insulating substrate.