Semiconductor Package Isolation Structure for Dielectric Strength
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Solution Overview
Problem
The existing semiconductor devices for inverter applications face challenges in maintaining dielectric strength due to significant differences in power supply voltages between control and drive elements, leading to potential dielectric breakdown of insulating elements.
Innovation Solution
The semiconductor device incorporates a support member with an insulating portion containing a resin, which electrically floats relative to the die pads and includes a bonding layer to prevent charge carrier flow, along with an inductive-type insulating element with a relay portion located closer to the support member, reducing potential differences and enhancing dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating element is interposed between conductive paths with different power supply voltages, then dielectric strength is improved, but the risk of dielectric breakdown increases due to significant voltage differences
Solution Approach 1:
A support member with an insulating portion containing resin is introduced as an intermediary between the first and second die pads. This support member electrically floats relative to both die pads and includes a bonding layer that prevents charge carrier flow, thereby mediating the electrical isolation between conductive paths with different voltages while reducing potential differences across the insulating element
Solution Approach 2:
The insulating structure is segmented into multiple components: the insulating element itself, the support member with insulating portion, and the bonding layer. This segmentation allows each component to perform its specific function - the insulating element provides dielectric isolation, the support member provides structural support and additional insulation, and the bonding layer prevents charge carrier flow, collectively resolving the contradiction between maintaining dielectric strength and preventing breakdown
2Device complexity
If the insulating element is mounted directly on the die pad, then device complexity is reduced, but charge carrier flow may occur between conductive paths
Solution Approach 1:
The support member acts as an intermediary between the die pad and the insulating element. It includes a bonding layer that specifically prevents charge carrier flow while maintaining electrical floatation relative to the die pads. This intermediary structure adds minimal complexity but effectively prevents charge carrier contamination that would occur with direct mounting
Solution Approach 2:
The support member extends in the thickness direction between the first and second die pads, creating an additional dimensional barrier against charge carrier flow. This vertical dimensionality change provides enhanced isolation without significantly increasing planar device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the dielectric strength between semiconductor elements and the insulating element, effectively preventing charge carrier flow and reducing potential differences, thereby enhancing the reliability of the semiconductor device.
Implementation Method 1
at least a portion of the support member is an insulating portion (231) containing a resin
Implementation Method 2
includes a bonding layer to prevent charge carrier flow
Data Source
AI summary
A semiconductor device includes: a first die pad; a second die pad; a first semiconductor element on the first die pad; a second semiconductor element on the second die pad; an insulating element electrically connected to the first semiconductor element and the second semiconductor element and electrically insulating the first and second semiconductor elements from each other; a sealing resin covering the first semiconductor element, the second semiconductor element and the insulating element; and a support member on which the insulating element is mounted, where the support member includes an insulating portion containing a resin. The first die pad and the second die pad are spaced apart from each other in a first direction orthogonal to a thickness direction of the first semiconductor element. The support member is supported by at least one of the first die pad, the second die pad and the sealing resin.