Semiconductor Package Laminate With Integrated Spacer
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Solution Overview
Problem
Conventional semiconductor packaging technologies face challenges in achieving high contact area and quality connections to both sides of semiconductor dies, leading to high impedance and difficulties in scaling due to limitations in connection cross-sectional dimensions and via pitch, especially as chips become smaller.
Innovation Solution
The method involves forming a semiconductor package using a laminate substrate with integrated spacers around the dies, which are embedded within die openings, and filling through openings with conductive material to create robust connections, allowing for large area connections and efficient assembly processes using inexpensive materials and minimal processing stages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If conventional packaging technologies are used to connect semiconductor dies, then assembly processes are simplified, but contact area is limited and impedance increases
Solution Approach 1:
The patent transitions from conventional via-based vertical connections to large-area planar contact pads on the die surface. By expanding the connection interface from narrow vias to extended two-dimensional contact regions, the patent achieves both increased contact area and reduced impedance while maintaining compatibility with standard assembly processes
Solution Approach 2:
The connection structure is segmented into distinct functional regions: large-area contact pads for electrical connection, spacer regions for mechanical support and alignment, and defined gaps for isolation. This segmentation allows each region to optimize its function independently, achieving low impedance through large contact area while maintaining assembly simplicity through clear structural zones
2Volume of moving object
If chips are scaled down to smaller dimensions, then device integration increases, but connection cross-sectional dimensions and via pitch become limited
Solution Approach 1:
As chip size decreases, the patent compensates by expanding the connection interface in the planar dimensions rather than relying on vertical via depth. The large-area contact pads provide sufficient connection cross-section even when chip footprint is reduced, allowing continued scaling without hitting via pitch or cross-sectional dimension limits
Solution Approach 2:
The patent applies different structural qualities to different regions: large-area high-conductivity contact pads at the connection points, thin spacer regions for mechanical support, and controlled gaps for isolation. This local differentiation allows small chips to achieve robust connections at critical points while maintaining overall miniaturization
3Manufacturing precision
If integrated spacers are formed around dies, then die securing and alignment improve, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple functions into the spacer structure: mechanical die securing, alignment reference, electrical isolation, and planarization. By merging these functions into a single integrated spacer component formed through coordinated patterning and deposition, the patent achieves high manufacturing precision without proportionally increasing processing stages
Solution Approach 2:
The spacer structure serves multiple purposes simultaneously: it mechanically secures the die, provides alignment references for subsequent processing, establishes electrical isolation zones, and creates a planar surface for overlying structures. This multi-functionality reduces the need for separate processing steps for each function
4Reliability
If large area connections are implemented, then contact quality and power density improve, but material usage and processing complexity increase
Solution Approach 1:
The patent concentrates conductive material in the large-area contact pad regions where it is most needed for low-impedance connections, while using minimal or no conductive material in the spacer and gap regions. This localized material application achieves high contact quality without proportionally increasing overall material consumption
Solution Approach 2:
The patent employs composite structures combining conductive materials in contact regions with dielectric or semi-conductive materials in spacer regions. This composite approach allows large-area connections to be formed with optimized material distribution, achieving high contact quality while controlling material usage through functional differentiation
Data Source
AI summary
In one embodiment, a method of fabricating a semiconductor package includes forming a first plurality of die openings on a laminate substrate. The laminate substrate has a front side and an opposite back side. A plurality of first dies is placed within the first plurality of die openings. An integrated spacer is formed around each die of the plurality of first dies. The integrated spacer is disposed in gaps between the laminate substrate and an outer sidewall of each die of the plurality of first dies. The integrated spacer holds the die within the laminate substrate by partially extending over a portion of a top surface of each die of the plurality of first dies. Front side contacts are formed over the front side of the laminate substrate.