Semiconductor Package Dicing with Two-Stage Laser Burr Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor package manufacturing methods face challenges in achieving reliable and efficient electrical connections between semiconductor chips due to surface irregularities caused by burrs on insulating layers, which affect bonding properties and overall package reliability.
Innovation Solution
A method involving a two-stage laser grooving process and a dicing process using a mask layer to remove burrs on insulating layers, resulting in a flat bonding surface for improved chip-to-chip contact and bonding reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-stage laser grooving process is used, then the manufacturing process is simple and fast, but burrs remain on the insulating layer surface causing bonding defects
Solution Approach 1:
The laser grooving process is divided into two distinct stages: a first laser grooving process that forms the initial groove, and a second laser grooving process that removes burrs from the insulating layer surface. This segmentation allows each process stage to be optimized for its specific function, thereby improving bonding reliability while maintaining reasonable process complexity.
Solution Approach 2:
The first laser grooving process performs preliminary cutting to create the basic groove structure, and the second laser grooving process subsequently performs preliminary burr removal before bonding. This preliminary action sequence ensures that surface irregularities are eliminated in advance, preventing bonding defects and improving overall bonding reliability.
2Reliability
If laser grooving is performed without a mask layer, then the process is simpler, but insulating layer debris contaminates the bonding surface
Solution Approach 1:
A mask layer is introduced as an intermediary material during the laser grooving process. This mask layer serves multiple functions: it prevents insulating layer debris from contaminating the bonding surface, and it facilitates easier removal of burrs and debris through the second laser grooving process. The mask layer is temporarily present during manufacturing but is removed afterward, so it does not affect the final product structure.
Solution Approach 2:
The mask layer is applied, used to protect the bonding surface during laser processing, and then completely removed after the process. This extraction approach allows the mask layer to serve its protective function during manufacturing without remaining in the final product, thereby maintaining bonding reliability while preserving manufacturing ease.
3Manufacturing precision
If burrs on the insulating layer are not removed, then the manufacturing process is faster, but bonding surfaces have irregularities causing voids and defects
Solution Approach 1:
The manufacturing process incorporates periodic action through two distinct laser grooving passes: the first pass creates the initial groove structure, and the second pass periodically removes burrs and surface irregularities. This periodic processing ensures high surface flatness and manufacturing precision while maintaining reasonable productivity by automating the sequence.
Solution Approach 2:
The conventional mechanical burr removal methods are replaced with a laser-based approach. The second laser grooving process uses optical energy to precisely remove burrs and surface irregularities without mechanical contact, thereby achieving high surface flatness while maintaining manufacturing efficiency through a non-contact, automated process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances electrical characteristics and reliability of semiconductor packages by ensuring stable, void-free bonding surfaces between semiconductor structures, improving bonding properties and reducing surface irregularities.
Implementation Method 1
forming a groove in the semiconductor substrate by performing a first laser grooving process; expanding an opening of the mask layer opened by the first laser grooving process by performing a second laser grooving process
Implementation Method 2
performing a first laser grooving process; performing a second laser grooving process; performing a dicing process
Data Source
AI summary
A method of manufacturing a semiconductor package, includes forming a mask layer on a wafer, the wafer including a semiconductor substrate and an insulating layer; forming a groove in the semiconductor substrate by performing a first laser grooving process; expanding an opening of the mask layer opened by the first laser grooving process by performing a second laser grooving process; exposing a portion of the insulating layer by removing a portion of the mask layer; and cutting the semiconductor substrate while removing the portion of the insulating layer exposed during the exposing by performing a dicing process.