Semiconductor Package Bonding Via Layout for Low Silicon Noise
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Solution Overview
Problem
Integration of multiple semiconductor devices in wafer-level packaging poses challenges, particularly in achieving efficient electrical and optical connections while minimizing silicon noise and reducing production costs.
Innovation Solution
A semiconductor package manufacturing process involving a substrate with a bulk semiconductor layer, insulator layer, and front semiconductor layer, where semiconductor dies are hybrid-bonded to an interconnection structure with dielectric and conductive traces, and encapsulated with a buffer layer to facilitate optical and electrical connections, while reducing silicon noise by omitting the bulk semiconductor layer in the final product.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor devices are integrated in wafer-level packaging, then integration efficiency and productivity are improved, but device complexity and manufacturing precision requirements increase
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional layers: bulk semiconductor layer, insulator layer, and front semiconductor layer. Each layer is processed and prepared separately before bonding, allowing complex multi-device integration to be managed through modular layer-by-layer fabrication rather than monolithic processing
Solution Approach 2:
The patent implements wafer-level packaging where multiple semiconductor dies are integrated within a single wafer structure. The front semiconductor layer containing multiple dies is bonded to the bulk semiconductor layer, creating a nested configuration that achieves high integration density while maintaining manageable complexity through hierarchical organization
2Reliability
If hybrid bonding with dielectric and conductive traces is used, then electrical and optical connection efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The insulator layer with conductive traces and dielectric structures is prepared in advance on the bulk semiconductor layer before the front semiconductor layer is bonded. This preliminary preparation of interconnection structures allows precise electrical and optical connections to be established through the bonding process without requiring ultra-precise alignment during final assembly
Solution Approach 2:
The insulator layer serves as an intermediary structure containing conductive traces that facilitate electrical connections between the bulk semiconductor layer and front semiconductor layer. The dielectric material provides both electrical isolation and mechanical support, enabling reliable interconnections while reducing the precision requirements for direct bonding between active device regions
3Object-generated harmful factors
If the bulk semiconductor layer is omitted in the final product, then silicon noise is reduced, but structural stability may be compromised
Solution Approach 1:
The bulk semiconductor layer is selectively removed from the final packaged product after the front semiconductor layer has been bonded to the interconnection structures. This extraction eliminates the source of silicon noise while the insulator layer with its conductive traces and dielectric structures remains to provide the necessary structural framework and electrical interconnections
Solution Approach 2:
The bulk semiconductor layer serves as a temporary substrate that facilitates fabrication and bonding processes but is not needed in the final product. It is deliberately designed to be removed after serving its manufacturing purpose, similar to a disposable fixture that enables production but is discarded in the final product to eliminate harmful effects
Data Source
AI summary
A semiconductor package includes a semiconductor die, a device layer over the semiconductor die and including an optical device, an insulator layer over the device layer, a buffer layer over the insulator layer, an etch stop layer between the device layer and the insulator layer, a connective terminal, and a bonding via passing through the device layer and electrically connecting the semiconductor die to the connective terminal. The conductive terminal passes through the etch stop layer, the insulator layer, and the buffer layer. The conductive terminal is in direct contact with the etch stop layer.