Semiconductor Package Metal TIM Structure to Prevent Re-Melting
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Solution Overview
Problem
Conventional solid thermal interface materials (TIMs) have low thermal conductivity, and indium TIMs have a low melting point, leading to re-melting issues during subsequent packaging processes, which results in voids and low coverage.
Innovation Solution
A semiconductor package with a built-in thermal conductive structure, where a first metal TIM is plated on the package, followed by a dielectric layer and a second metal TIM bonded to the first, using metals like copper for enhanced thermal conductivity and high melting points to prevent re-melting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional solid TIMs are used, then the packaging process is simple, but the thermal conductivity is low
Solution Approach 1:
The patent uses composite material structure with multiple metal layers (copper, aluminum, or aluminum alloy) combined with dielectric layers to create a TIM with superior thermal conductivity. The composite structure integrates different materials to achieve both high thermal performance and structural stability during packaging processes.
Solution Approach 2:
The patent changes the material parameters by using metals with high melting points (copper: 1085°C, aluminum: 660°C) and high thermal conductivity instead of conventional solid TIMs. This parameter change ensures the TIM remains stable during reflow soldering while maintaining excellent heat dissipation performance.
2Reliability
If indium TIMs are used, then the thermal conductivity is improved, but the TIM melts during subsequent packaging processes
Solution Approach 1:
The patent fundamentally changes the temperature parameter by selecting metal materials with melting points significantly higher than the packaging process temperatures. Copper (1085°C) and aluminum (660°C) are used instead of indium, ensuring the TIM remains solid and stable during reflow soldering while maintaining high thermal conductivity.
Solution Approach 2:
The patent employs composite metal-dielectric structures where metal layers provide high thermal conductivity and high melting point stability, while dielectric layers provide structural support and insulation. This composite approach achieves both thermal performance and thermal stability during packaging.
3Reliability
If metal TIMs with high melting points are used, then re-melting is prevented, but the manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the metal TIM layers and dielectric layers before the reflow soldering process. The TIM structure is pre-established with proper material selection and layer configuration, so it automatically maintains structural integrity during subsequent high-temperature packaging without requiring additional protective measures.
Solution Approach 2:
The metal TIM structure serves multiple functions simultaneously: it provides thermal conduction, structural stability during reflow, and acts as an integral part of the package substrate. This multi-functionality reduces the need for separate components and simplifies the overall manufacturing process despite the advanced material usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves better thermal conductivity and prevents re-melting issues during packaging processes, ensuring effective heat dissipation and maintaining the structural integrity of the TIM.
Implementation Method 1
a first metal TIM is plated on the package... using metals like copper for enhanced thermal conductivity
Implementation Method 2
indium TIMs has low melting point... This results in the indium TIMs to melt again in subsequent packaging process... using metals like copper for enhanced thermal conductivity and high melting points to prevent re-melting
Data Source
AI summary
A method includes depositing a first metal layer on a package component, wherein the package component comprises a first device die, forming a dielectric layer on the package component, and plating a metal thermal interface material on the first metal layer. The dielectric layer includes portions on opposing sides of the metal thermal interface material. A heat sink is bonded on the metal thermal interface material. The heat sink includes a second metal layer physically joined to the metal thermal interface material.


