Semiconductor Package Bonding Structure for Stress and Thermal Tolerance
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving smaller and more reliable packaging techniques for semiconductor dies as demand grows for smaller electronic devices, requiring improved stress tolerance and thermal performance.
Innovation Solution
A semiconductor package is formed using a combination of fully inter-metallic compound (IMC) and partially IMC bonding regions to connect semiconductor devices to an interposer, allowing for improved stress tolerance and thermal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional single-type bonding regions are used, then manufacturing process is simpler, but stress tolerance and thermal performance are insufficient
Solution Approach 1:
The bonding region is segmented into multiple distinct zones: a first bonding region with inter-metallic compound formation and a second bonding region with solder material. This segmentation allows each zone to perform its specialized function, improving overall stress tolerance and thermal performance while managing the complexity through systematic division of labor among different material regions
Solution Approach 2:
Different local regions of the bonding structure are assigned different material compositions and properties. The first bonding region uses inter-metallic compounds for specific mechanical properties, while the second bonding region uses solder material for other properties. This local differentiation optimizes performance in each zone without requiring complete redesign of the entire bonding structure
2Temperature
If traditional single-type bonding regions are used, then manufacturing process is simpler, but thermal performance and current density handling are insufficient
Solution Approach 1:
The bonding region is segmented into multiple distinct zones: a first bonding region with inter-metallic compound formation and a second bonding region with solder material. This segmentation allows each zone to perform its specialized function, improving overall stress tolerance and thermal performance while managing the complexity through systematic division of labor among different material regions
Solution Approach 2:
The bonding structure employs composite materials by combining inter-metallic compounds and solder materials in distinct regions. This composite approach leverages the complementary properties of different materials to achieve superior thermal performance and current density handling that neither material could provide alone
3Productivity
If minimum feature size is reduced to increase integration density, then more components fit in given area, but packaging reliability and stress tolerance decrease
Solution Approach 1:
Different local regions of the bonding structure are assigned different material compositions and properties. The first bonding region uses inter-metallic compounds for specific mechanical properties, while the second bonding region uses solder material for other properties. This local differentiation optimizes performance in each zone without requiring complete redesign of the entire bonding structure
Solution Approach 2:
The bonding structure employs composite materials by combining inter-metallic compounds and solder materials in distinct regions. This composite approach leverages the complementary properties of different materials to achieve superior thermal performance and current density handling that neither material could provide alone
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and performance of semiconductor packages by providing improved stress tolerance and thermal management through the use of mixed bonding regions, enabling higher current densities and robustness to thermal shock.
Implementation Method 1
bonding regions that include inter-metallic compounds formed between dissimilar metals
Implementation Method 2
bonding regions that include solder material
Data Source
AI summary
A method includes forming a first conductive pillar on an interposer; forming a second conductive pillar on the interposer, wherein the second conductive pillar includes a barrier layer; bonding a first semiconductor device to the first conductive pillar by a first bonding region that includes more inter-metallic compound than solder; and bonding the first semiconductor device to the second conductive pillar by a second bonding region that includes more solder than inter-metallic compound.


