Semiconductor Package Bonding with Multi-Beam Thermal Control
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Solution Overview
Problem
Laser-assisted bonding (LAB) methods for semiconductor package structures can damage materials like epoxy molding compounds or substrates due to differing thermal conductivities, necessitating a new method to form bonding joints without overheating and causing damage.
Innovation Solution
A method involving multiple energy-beams with controlled irradiation areas, powers, and emission times is used to heat semiconductor devices and substrates, ensuring that bonding joints are formed without overheating sensitive materials by managing thermal conductivity differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser assisted bonding (LAB) is used to melt bumps and solder balls for fine pitch flip chip bonding, then bonding efficiency and fine pitch capability are improved, but materials such as epoxy molding compound or substrate may be damaged due to excessive heat from high thermal conductivity materials
Solution Approach 1:
The patent applies local quality by using a first energy beam with a first irradiation area specifically targeted at the first device, and a second energy beam with a second irradiation area covering both devices. This localized energy distribution allows precise heating of bonding interfaces without excessive heat affecting surrounding materials like epoxy molding compound or substrate, thereby resolving the contradiction between bonding efficiency and heat damage prevention
Solution Approach 2:
The patent segments the bonding process into multiple steps with different energy beams: a first energy beam for heating the first device, and a second energy beam for heating both devices. This segmentation allows controlled thermal management where each beam can be optimized for its specific heating task, improving bonding efficiency while preventing overheating and damage to sensitive materials
2Reliability
If high power energy beam is used to heat devices for bonding, then bonding joint formation is achieved, but temperature control becomes difficult and may overheat sensitive materials with varying thermal conductivities
Solution Approach 1:
The patent employs dynamic control by adjusting energy beam parameters (power, irradiation area, exposure time) based on the specific heating requirements of different devices and bonding stages. The first energy beam uses a first power level for the first device, while the second energy beam uses a second power level for both devices, allowing real-time temperature management that ensures reliable bonding joint formation without overheating sensitive materials
Solution Approach 2:
The patent changes physical parameters of the energy beams to control heating: using different powers (first power vs. second power), different irradiation areas (first irradiation area vs. second irradiation area), and different exposure times. These parameter changes enable precise temperature control during bonding, achieving reliable joint formation while preventing damage to materials with varying thermal conductivities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents overheating of materials with varying thermal conductivities, enhancing the reliability of semiconductor package structures by controlling temperature within safe limits, thereby improving the integrity of bonding joints.
Implementation Method 1
heating the first device by a first energy-beam with a first power
Implementation Method 2
heating the first device and the second device by a second energy-beam with a second power, wherein the second power is greater than the first power
Data Source
AI summary
A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.