Semiconductor Package Layout for Optical Isolation and Current Spreading

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor device packages face challenges in achieving improved contrast ratio and current spreading, particularly in light-emitting devices where optical interference and electrical characteristics are affected by the spacing and structure of multiple chips.

Innovation Solution

A semiconductor device package design featuring a substrate with semiconductor structures having a specific conductivity-type layers and an active layer, where the maximum height of the outermost surface of the first conductivity-type semiconductor layer to the separation distance between adjacent structures is optimized within a range of 1:3 to 1:60, and an intermediate layer is used to reduce optical interference and enhance contrast ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple chips are disposed close to each other to appear as one light source, then the device can be used as a headlight with multiple independently controllable chips, but optical interference occurs between adjacent chips

Engineering Contradiction:
Improveindependent chip control capabilityVSAvoidoptical interference
Core Design Contradiction:
Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

An intermediate layer is introduced between adjacent semiconductor structures to prevent optical interference. This intermediate layer acts as a mediator that blocks or absorbs stray light from one chip while allowing the desired light output, enabling multiple chips to be disposed close together without optical interference.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If multiple small-sized chips are disposed to improve contrast ratio through independent on/off control, then versatility is enhanced, but improving contrast ratio becomes difficult due to spacing requirements

Engineering Contradiction:
Improveindependent chip control capabilityVSAvoidcontrast ratio
Core Design Contradiction:
Adaptability or versatilityVSIllumination intensity

Solution Approach 1:

The intermediate layer enables chips to be disposed closer together by preventing optical interference, which allows the device to achieve both independent chip control and improved contrast ratio simultaneously.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The intermediate layer is selectively positioned between adjacent semiconductor structures to provide localized optical isolation, allowing each chip to maintain its light output characteristics while preventing interference with neighboring chips.

Inventive Principle:
Principle #3Local quality

3Reliability

If the height of the first conductivity-type semiconductor layer is increased to improve current spreading, then electrical characteristics are enhanced, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvecurrent spreadingVSAvoidlayer height control
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent specifies a particular height range for the first conductivity-type semiconductor layer (1 μm to 3 μm) to optimize current spreading while maintaining manufacturability. This parameter optimization balances electrical performance with device complexity and manufacturing ease.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances the contrast ratio and current spreading, preventing optical interference and maintaining electrical characteristics by controlling the height and spacing of semiconductor structures and using an intermediate layer to block unwanted light emission.

Implementation Method 1

an intermediate layer is used to reduce optical interference and enhance contrast ratio

Methodology Applied
Scientific EffectLight blocking: Absorption (EM radiation)

Data Source

PatentUS11894307B2Semiconductor device package
Publication Date: 2024.02.06 SUZHOU LEKIN SEMICON CO LTD
  • US11894307B2 patent drawing
  • US11894307B2 patent drawing
  • US11894307B2 patent drawing

AI summary

Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.