Semiconductor Package Bonding Pad Layout for PoP Heat Dissipation
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in achieving high integration density and efficient thermal dissipation while maintaining reliable electrical connections, particularly in Package-on-Package (PoP) devices.
Innovation Solution
The integration of bonding structures with embedded electrical and thermal pads, including flexible thermal pads with specific shapes and locations, allows for face-to-face attachment of integrated circuit dies, enhancing thermal dissipation and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional semiconductor packaging is used, then manufacturing simplicity is maintained, but integration density and thermal dissipation efficiency are insufficient
Solution Approach 1:
The patent implements Package-on-Package (PoP) technology where a top semiconductor package is stacked on top of a bottom semiconductor package, creating a nested three-dimensional structure. This nesting approach enables high integration density by utilizing vertical space rather than horizontal expansion, while the standardized bonding structures facilitate modular assembly that manages the inherent complexity.
Solution Approach 2:
The invention transitions from traditional two-dimensional planar packaging to three-dimensional vertical stacking. By arranging semiconductor packages in the vertical dimension (stacking top package on bottom package), the system achieves higher integration density without proportionally increasing footprint area, effectively utilizing the third spatial dimension to resolve the contradiction between density and complexity.
2Temperature
If conventional bonding structures are used, then manufacturing process is simple, but thermal dissipation efficiency is insufficient
Solution Approach 1:
The bonding structures in the patent serve multiple functions simultaneously: they provide electrical connectivity through embedded electrical pads and thermal dissipation through embedded thermal pads. This multi-functionality integrates thermal management directly into the bonding interface, improving thermal dissipation efficiency without requiring separate thermal management components or processes.
Solution Approach 2:
The invention implements different types of bonding structures at different locations on the semiconductor package: electrical bonding pads positioned for signal and power transmission, and thermal bonding pads positioned for heat dissipation. This localized differentiation optimizes thermal dissipation at specific hot spots while maintaining electrical functionality, addressing thermal management needs without complicating the overall manufacturing process.
3Quantity of substance
If integration density is increased through stacking, then component density improves, but thermal dissipation becomes more challenging
Solution Approach 1:
The patent incorporates thermal bonding pads and thermal management features directly into the bonding structures before the stacking process. By pre-integrating thermal dissipation pathways into the bonding interfaces, the system establishes efficient heat extraction routes from the outset, preventing thermal accumulation that would otherwise result from increased component density in stacked configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved thermal dissipation by up to 90% and increased metal density, leading to higher reliability and yield in semiconductor packages.
Implementation Method 1
The bonding structures may be bonded to one another in a face-to-face attachment of the integrated circuit dies
Implementation Method 2
thermal pads to dissipate heat
Data Source
AI summary
In an embodiment, a method includes forming a device layer along a substrate; forming a first interconnect structure over the device layer; forming a metal pad over the first interconnect structure; forming first bonding pads over and electrically connected to the first interconnect structure; and forming a second bonding pad over and electrically isolated from the first interconnect structure, in a plan view the first bonding pads comprising four corners of a frame around a portion of the second bonding pad.