Semiconductor Package Insulation Layer Against Plating Solution Bleed
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Solution Overview
Problem
In semiconductor devices, foreign matter can get trapped between the adhesive layer and the semiconductor element, creating gaps that allow plating solutions to bleed in during wiring formation, affecting the device's quality.
Innovation Solution
A semiconductor device design featuring a substrate with an adhesive layer, a semiconductor element adhered to it, through holes exposing electrodes, via wiring connecting these electrodes, and a protective insulation layer covering the semiconductor element's side surfaces and part of its lower surface to prevent plating solution ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the semiconductor element is adhered to the adhesive layer, then the device structure is formed, but foreign matter may be trapped creating gaps that allow plating solution to bleed in
Solution Approach 1:
The patent introduces a protective insulation layer as an intermediary barrier between the adhesive layer and the semiconductor element. This layer prevents plating solution from directly contacting the semiconductor element through gaps caused by foreign matter, thus maintaining product quality while preserving the simplicity of the adhesion process
Solution Approach 2:
The protective insulation layer is formed beforehand on the adhesive layer before the semiconductor element is mounted. This preemptive measure creates a protective barrier that cushions against the potential harm of plating solution infiltration through gaps, preventing quality issues before they occur
2Reliability
If a protective film with recesses is used to cover the semiconductor element, then plating solution ingress is prevented, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts the protective function from the protection film itself and transfers it to a separate protective insulation layer formed on the adhesive layer. This eliminates the need for complex recess structures in the protection film, simplifying the overall device structure while maintaining effective protection against plating solution ingress
Solution Approach 2:
The protective function is segmented into a dedicated protective insulation layer separate from the adhesion and protection film layers. This segmentation allows each layer to perform its specific function without requiring complex integrated structures, reducing overall device complexity
Data Source
AI summary
A semiconductor device includes a substrate, an adhesive layer formed on a lower surface of the substrate, a semiconductor element adhered to a lower surface of the adhesive layer, a through hole extending through the substrate and the adhesive layer and exposing a first electrode arranged on an upper surface of the semiconductor element, a via wiring formed in the through hole, a wiring layer formed on an upper surface of the substrate and electrically connected to the first electrode through the via wiring, and a protective insulation layer formed on the lower surface of the adhesive layer. The protective insulation layer covers an entirety of all side surfaces of the semiconductor element and a peripheral part of a lower surface of the semiconductor element and exposes a central part of the lower surface of the semiconductor element.