Semiconductor Package RDL Descum for Short and Delamination Control

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Solution Overview

Problem

Existing semiconductor packaging techniques face challenges in achieving high integration density and component density while minimizing electrical shorts and stress-related issues such as delamination and cracking, particularly in Package-on-Package (PoP) technology.

Innovation Solution

The use of a point-of-reference (POR) descum process and an enhanced low-pressure descum process to treat polymer layers in redistribution structures, which results in higher surface roughness and lower reflectivity, improving sidewall profiles and reducing bridging issues, thereby enhancing device performance and production throughput.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional packaging techniques are used to achieve high integration density, then component density improves, but electrical shorts and stress-related issues (delamination and cracking) increase

Engineering Contradiction:
Improvecomponent densityVSAvoidelectrical short and stress-related issues
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies descum processes that modify the surface parameters of polymer layers, specifically increasing surface roughness and decreasing reflectivity. These parameter changes in the polymer layer surface properties reduce electrical shorts and stress-related failures while maintaining high component density in PoP packages

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If polymer layers are treated with descum processes to reduce electrical shorts, then manufacturing precision improves, but production throughput may decrease due to additional processing steps

Engineering Contradiction:
Improveoverlay controlVSAvoidproduction throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The descum processes are performed at predetermined stages during the redistribution structure formation process, before subsequent layers are deposited. This preliminary treatment of polymer layer surfaces ensures optimal adhesion and overlay control for subsequent layers, preventing defects that would require rework and actually improving overall production efficiency

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The described processes achieve better overlay control, reduce stress-related issues, and improve production throughput by addressing electrical shorts and delamination in semiconductor packages, leading to improved device performance and yield.

Implementation Method 1

The use of a point-of-reference (POR) descum process and an enhanced low-pressure descum process to treat polymer layers in redistribution structures

Methodology Applied
Scientific EffectPlasma treatment (descum process): Plasma

Data Source

PatentUS20250336741A1Semiconductor packages and methods of forming
Publication Date: 2025.10.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250336741A1 patent drawing
  • US20250336741A1 patent drawing
  • US20250336741A1 patent drawing

AI summary

A method of forming a semiconductor package includes: surrounding a die with a molding material; and forming a redistribution structure (RDS) over the molding material and electrically coupled to the die, which includes: depositing a first dielectric layer over the molding material; patterning the first dielectric layer to form first openings in the first dielectric layer; performing a first descum process to clean the first openings; after performing the first descum process, forming a first redistribution layer (RDL) on the first dielectric layer; depositing a second dielectric layer over the molding material; patterning the second dielectric layer to form second openings in the second dielectric layer; performing a second descum process to clean the second openings, where the first and second descum processes are performed under different process conditions; and after performing the second descum process, forming a second RDL on the second dielectric layer.