Semiconductor Package Redistribution Layer Via Integration

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Solution Overview

Problem

Current semiconductor package manufacturing techniques face challenges in reducing the size and increasing the integration density of semiconductor chips, particularly due to limitations in forming thin packages with printed circuit boards and achieving short signal paths.

Innovation Solution

The solution involves forming conductive vias in a silicon substrate with through holes to decrease distances between them, eliminating the need for a carrier wafer and enabling the formation of redistribution layers that connect upper and lower semiconductor chips, thereby creating a high-performance semiconductor package with reduced size and increased integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If a printed circuit board is used to mount semiconductor chips, then the package can be manufactured using conventional techniques, but the package thickness cannot be reduced and integration density is limited

Engineering Contradiction:
Improvepackage thicknessVSAvoidmanufacturing complexity
Core Design Contradiction:
Volume of moving objectVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the printed circuit board from the package structure, replacing it with a substrate that integrates the mounting function directly into the package body. This removal of the external PCB enables thin-profile packages while maintaining chip mounting capability through direct attachment to the substrate's upper surface.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the functions of the printed circuit board and the package substrate into a single integrated structure. The substrate serves both as the mechanical support for mounting chips and as the interconnection medium through conductive vias, eliminating the need for separate PCB layers and reducing overall package thickness.

Inventive Principle:
Principle #5Merging (Combining)

2Quantity of substance

If the distance between through electrodes is reduced to increase integration density, then more chips can be mounted in a smaller area, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvenumber of chips per packageVSAvoidvia positioning precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent utilizes the vertical dimension by forming conductive vias that extend through the substrate thickness, enabling electrical interconnection in the Z-direction. This three-dimensional via structure allows chips to be densely packed in the XY-plane while maintaining electrical connectivity through the substrate thickness, increasing integration density without proportionally increasing manufacturing difficulty.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If signal paths are lengthened to connect multiple chips, then more chips can be integrated, but signal transmission performance deteriorates

Engineering Contradiction:
Improvenumber of chipsVSAvoidsignal transmission speed
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

The patent implements local quality by providing dedicated conductive via pathways for each chip interconnection, optimizing the signal path length and routing for each specific connection. This localized via structure ensures that signal transmission paths remain as short as possible between adjacent chips, maintaining high-speed signal integrity while supporting multiple chip integration.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11488910B2Semiconductor package having redistribution layer
Publication Date: 2022.11.01 SAMSUNG ELECTRONICS CO LTD
  • US11488910B2 patent drawing
  • US11488910B2 patent drawing
  • US11488910B2 patent drawing

AI summary

A semiconductor package includes a silicon substrate including a cavity and a plurality of through holes spaced apart from the cavity, a first semiconductor chip in the cavity, a plurality of conductive vias in the plurality of through holes, a first redistribution layer on the silicon substrate and connected to the first semiconductor chip and the conductive vias, and a second redistribution layer below the silicon substrate and connected to the first semiconductor chip and the plurality of conductive vias.