Semiconductor Package Thermal Metal Regions for Safer Singulation
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving efficient heat dissipation and reliable singulation processes due to the limitations of existing packaging techniques, particularly in shrinking electronic devices where traditional high thermal conductivity materials can be prone to damage during singulation.
Innovation Solution
The approach involves bonding semiconductor dies and thermal structures to a wafer using high thermal conductivity materials in scribe regions, followed by replacing these materials with less soft scribe fill regions to enhance singulation efficiency and reliability, while maintaining effective heat dissipation through thermal metal regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high thermal conductivity materials are used in scribe regions, then heat dissipation efficiency is improved, but the materials are prone to damage during singulation
Solution Approach 1:
The scribe region is divided into two distinct parts: a first scribe fill material and a second scribe fill material. The first material provides thermal conductivity for heat dissipation, while the second material (softer than the first) protects against damage during singulation. This segmentation allows each material to fulfill its specific function without compromising the other.
Solution Approach 2:
Different materials with different properties are applied to different locations within the scribe region. The first scribe fill material is placed in areas requiring thermal conductivity, while the second softer material is placed in areas susceptible to damage during singulation. This local differentiation optimizes both heat dissipation and singulation reliability.
2Ease of manufacture
If traditional packaging techniques are used, then manufacturing simplicity is maintained, but heat dissipation efficiency is insufficient
Solution Approach 1:
The scribe fill materials are applied to the scribe regions before the singulation process. This preliminary action ensures that both the thermal conductivity function and the damage protection function are in place before cutting, allowing the subsequent singulation to proceed reliably without compromising heat dissipation capabilities.
Solution Approach 2:
The patent uses composite filling in scribe regions, combining a first scribe fill material with a second scribe fill material that has different properties (specifically, softer). This composite approach enables simultaneous achievement of heat dissipation and damage resistance, overcoming the limitations of traditional single-material packaging techniques.
3Reliability
If scribe regions are filled with soft materials, then singulation damage is reduced, but heat dissipation capability is compromised
Solution Approach 1:
The scribe region is divided into two distinct parts: a first scribe fill material and a second scribe fill material. The first material provides thermal conductivity for heat dissipation, while the second material (softer than the first) protects against damage during singulation. This segmentation allows each material to fulfill its specific function without compromising the other.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves heat dissipation efficiency and reduces the risk of damage during singulation, leading to more reliable and efficient packaging processes for semiconductor devices.
Implementation Method 1
bonding semiconductor dies and thermal structures to a wafer using high thermal conductivity materials in scribe regions
Data Source
AI summary
A method includes bonding a first semiconductor die to a semiconductor substrate; bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap; filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region; and depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.