Semiconductor Package Side Contacts for High-Current Heat Dissipation
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Solution Overview
Problem
Existing power semiconductor packages face challenges in efficiently conducting high electrical currents and dissipating excess heat generated due to high current flow, necessitating improved routing of electrical connections.
Innovation Solution
A semiconductor package design featuring an electrical contact member with a horizontal portion connected to the encapsulant and side portions extending along the encapsulant's side faces, configured as electrical contact elements, which also facilitates heat dissipation through a substrate or heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrical connection routing is used, then the package structure is simple, but the current capacity (Imax) is limited and resistance (Ron) is high
Solution Approach 1:
The patent transitions from conventional planar electrical connections to a three-dimensional configuration by routing connections through the thickness of the package. The first and second electrical connections are positioned at opposite main faces of the encapsulant, creating a vertical current path that reduces resistance and increases current capacity while managing the increased structural complexity through systematic spatial arrangement.
2Power
If high currents are conducted through conventional paths, then the electrical connection is simple, but excessive heat is generated
Solution Approach 1:
The patent introduces a three-dimensional heat dissipation pathway by conducting electricity and heat through the thickness of the encapsulant rather than along the surface. This vertical thermal path, extending from the first main face through to the second main face, increases the effective heat dissipation area and reduces thermal concentration, thereby managing heat generation from high current flow.
Solution Approach 2:
The encapsulant is configured to provide both electrical insulation and thermal conduction pathways. By positioning electrical connections at opposite faces and providing dedicated heat dissipation paths through the encapsulant structure, the system uses the encapsulant material's properties to simultaneously manage electrical current flow and heat transfer, reducing excessive heat generation while maintaining electrical functionality.
3Reliability
If electrical connections are routed through the encapsulant thickness, then current capacity increases and resistance decreases, but the manufacturing complexity increases
Solution Approach 1:
The patent divides the electrical connection system into distinct segments: first electrical connection at the first main face, second electrical connection at the second main face, and separate heat dissipation pathways. This segmentation allows each component to be optimized and manufactured independently before assembly, reducing the overall manufacturing complexity despite the three-dimensional configuration. The first and second connections can be fabricated separately and then integrated into the encapsulant structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances electrical performance by increasing the maximum current capacity (Imax) and reducing resistance (Ron) while effectively dissipating heat, improving overall package efficiency.
Implementation Method 1
Due to the high currents of up to 10A and higher flowing in the load path of the semiconductor transistor, excessive heat is generated which has to be efficiently dissipated. Conducting the high electrical currents and simultaneously dissipating the excess heat requires the provision of an improved concept regarding the routing of the electrical connections.
Implementation Method 2
Due to the high currents of up to 10A and higher flowing in the load path of the semiconductor transistor, excessive heat is generated which has to be efficiently dissipated.
Data Source
Figure 1A~2A
Figure 2B~3B
AI summary
A semiconductor device package (20; 30) comprising a semiconductor transistor die comprising a first main face, a second main face opposite to the first main face, a first contact pad (11B) disposed on the first main face, and a second contact pad (11A) disposed on the second main face, an encapsulant (12) embedding the semiconductor transistor die, the encapsulant (12) comprises a first main face and a second main face opposite to the first main face, wherein the second main face of the encapsulant (12) is coplanar with the second main face of the semiconductor transistor die (11), and an electrical contact member (15; 25) connected with the encapsulant (12), the electrical contact member (15; 25) comprising a first horizontal portion (15A; 25A) and side portions (15B; 25B) connected to opposite side edges of the first horizontal portion (15A; 25A), wherein the first horizontal portion (15A; 25A) is connected with the second main face of the encapsulant (12); and wherein the side portions (15B; 25B) extend along first opposing side faces of the encapsulant (12) and are configured as first electrical contact elements.