Semiconductor Package Heat Dissipation Layout for Easier Singulation
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Solution Overview
Problem
The miniaturization of semiconductor devices faces challenges with heat dissipation, as excessive temperatures can decrease the reliability and lifetime of semiconductor dies, and existing bonding methods often result in soldering void defects and difficulties during the singulation process due to uneven rear surfaces and thick backside metal and solder layers.
Innovation Solution
The solution involves bonding heat dissipation elements, such as silicon bulks, to semiconductor dies with reduced bonding areas to improve heat dissipation efficiency, and strategically placing these elements and metal layers outside scribe lines to facilitate the singulation process, using a method that includes forming backside metal and solder layers to enhance bonding quality and reduce wafer warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation elements are bonded to semiconductor dies to improve heat dissipation, then heat dissipation efficiency is improved, but soldering void defects increase and bond quality decreases due to large bonding area
Solution Approach 1:
The patent applies local quality by creating non-uniform bonding areas where heat dissipation elements have reduced bonding area in specific regions. This allows the bonding structure to have different properties in different locations: larger bonding area where heat dissipation is prioritized and reduced bonding area where defect formation is problematic, thereby resolving the contradiction between heat dissipation efficiency and bond quality
2Strength
If backside metal layer and solder layer are made thick to improve bonding strength, then bonding strength is improved, but singulation process becomes difficult and tool lifespan decreases
Solution Approach 1:
The patent implements local quality by creating spatial variation in metal layer thickness. The backside metal layer and solder layer are configured with different thicknesses in different regions: thicker in areas where bonding strength is critical and thinner in areas where singulation is performed. This resolves the contradiction by maintaining bonding strength where needed while enabling easier singulation in other areas
Solution Approach 2:
The patent applies segmentation by dividing the bonding structure into regions with different metal layer thicknesses. This segmentation allows the structure to be optimized for both bonding strength and manufacturability, with thicker layers providing strength and thinner layers facilitating the singulation process and reducing tool wear
3Ease of manufacture
If uniform bonding area is used across heat dissipation elements, then manufacturing simplicity is maintained, but wafer warpage increases and integrated yield decreases
Solution Approach 1:
The patent applies local quality by implementing non-uniform bonding areas across the heat dissipation elements. Different regions of the wafer have different bonding area characteristics, which compensates for thermal expansion variations and reduces wafer warpage during processing. This resolves the contradiction by sacrificing some manufacturing uniformity to achieve better dimensional control and higher integrated yield
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces soldering void defects, improves bond quality, and simplifies the singulation process by minimizing the bonding area and placing difficult-to-cut elements outside scribe lines, thereby enhancing the integrated yield and extending tool lifespan.
Implementation Method 1
one or more heat dissipation elements are disposed on the plurality of semiconductor dies
Data Source
AI summary
Disclosed are a semiconductor package and a manufacturing method of a semiconductor package. In one embodiment, the semiconductor package includes an interposer substrate, a plurality of semiconductor dies, one or more heat dissipation elements and an encapsulant. The plurality of semiconductor dies are disposed on the interposer substrate. The one or more heat dissipation elements are disposed on the plurality of semiconductor dies. The encapsulant is disposed on the interposer substrate and surrounds the plurality of semiconductor dies and the one or more heat dissipation elements.