High-Power Semiconductor Package With Thermal Spreader Layers
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Solution Overview
Problem
High-power semiconductor devices, particularly those using gallium nitride, face challenges with heat output and localized hot spots due to high power densities, which affect performance and longevity.
Innovation Solution
A package design incorporating multiple thermal spreader layers with high thermal conductivity materials, such as diamond and aluminum nitride, between the semiconductor die and a metal carrier to reduce thermal resistance and mitigate hot spots, using thermally conductive adhesives for efficient heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high power density is used in gallium nitride devices, then power output is improved, but heat output and localized hot spots increase
Solution Approach 1:
The thermal management system is segmented into multiple functional layers: a first thermal spreader layer directly coupled to the semiconductor die, a second thermal spreader layer coupled to the first layer, and a heat sink coupled to the second layer. This segmentation allows each layer to perform specific thermal functions, distributing heat management across multiple components rather than relying on a single thermal path.
Solution Approach 2:
The patent introduces thermal spreader layers as intermediary components between the semiconductor die and the heat sink. These intermediary layers with high thermal conductivity serve as mediators to facilitate efficient heat transfer from the die to the heat sink, reducing thermal resistance and preventing hot spot formation.
2Reliability
If thermal spreader layers are added to reduce thermal resistance, then heat management is improved, but device complexity increases
Solution Approach 1:
The thermal spreader layers serve multiple functions simultaneously: they act as thermal conduits to transfer heat, provide mechanical support for the semiconductor die, and serve as bonding interfaces between different package components. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent employs composite material structures where thermal spreader layers with high thermal conductivity are integrated into the package architecture. These composite structures combine materials with different properties to achieve optimal thermal performance while maintaining structural integrity, balancing improved heat management with controlled complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively decreases thermal resistance and reduces the risk of hot spots, enhancing the performance and longevity of high-power semiconductor devices by efficiently managing thermal energy.
Implementation Method 1
A package design incorporating multiple thermal spreader layers with high thermal conductivity materials, such as diamond and aluminum nitride, between the semiconductor die and a metal carrier to reduce thermal resistance and mitigate hot spots
Data Source
AI summary
Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.