Semiconductor Package Support Structure for Reliable Wafer-Level Interconnects
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in ensuring the reliability and efficiency of wafer-level packaging processes, particularly in forming reliable electrical connections and structural support for semiconductor dies.
Innovation Solution
A manufacturing method involving a carrier with a debond layer, dielectric and seed layers, and a redistribution circuit structure with supporting structures and UBM patterns to enhance electrical connections and structural integrity, using materials like copper, nickel, and titanium for enhanced reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer-level packaging is used to improve productivity, then manufacturing efficiency increases, but reliability of electrical connections deteriorates
Solution Approach 1:
The patent segments the electrical connection structure into multiple functional layers: carrier layer, debond layer, dielectric layers, seed layers, and redistribution circuit structures. Each layer performs a specific function, allowing wafer-level packaging to maintain reliability while improving productivity through parallel processing of multiple dies.
Solution Approach 2:
The patent introduces intermediary layers including debond layer, dielectric layers, and seed layers between the carrier and semiconductor dies. These intermediary structures mediate the electrical connections, ensuring reliable signal transmission while enabling efficient wafer-level manufacturing processes.
2Reliability
If complex redistribution circuit structure is implemented to improve electrical connections, then connection reliability improves, but device complexity increases
Solution Approach 1:
The patent applies local quality by implementing redistribution circuit structures with varying complexity in different regions. The UBM patterns and conductive vias are strategically placed only where electrical connections are needed, rather than uniformly across the entire wafer, thus improving connection reliability while minimizing overall structural complexity.
Solution Approach 2:
The patent resolves complexity by transitioning from two-dimensional planar connections to three-dimensional vertical stacking. Multiple dielectric layers and conductive vias create vertical interconnection paths, allowing complex electrical connections to be achieved without increasing lateral structural complexity.
3Reliability
If multiple material layers are used to enhance adhesive strength, then bonding reliability improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies preliminary action by forming seed layers and UBM patterns on the carrier before attaching the semiconductor dies. This pre-preparation of bonding surfaces ensures proper adhesion and electrical connections, reducing the precision requirements during the actual die attachment process in wafer-level packaging.
Solution Approach 2:
The patent uses composite material structures with multiple functional layers including debond layer, dielectric layers, and metal seed layers. Each material is selected for its specific properties, creating a composite structure that provides both strong adhesion and electrical connectivity while accommodating manufacturing tolerances through material flexibility.
Data Source
AI summary
A semiconductor package includes a semiconductor die, a redistribution circuit structure, a supporting structure and a protective layer. The redistribution circuit structure is located on and electrically coupled to the semiconductor die. The supporting structure is located on an outer surface of the redistribution circuit structure, wherein the supporting structure is overlapped with at least a part of the semiconductor die or has a sidewall substantially aligned with a sidewall of the semiconductor die in a vertical projection on the redistribution circuit structure along a stacking direction of the redistribution circuit structure and the supporting structure. The protective layer is located on the supporting structure, wherein the supporting structure is sandwiched between the protective layer and the redistribution circuit structure.