Semiconductor Package Thickness-Matching Layer for Thick Die Embedding
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Solution Overview
Problem
Existing laminate semiconductor packages face challenges in integrating thick semiconductor dies due to manufacturing limitations and cost-prohibitive methods for accommodating them.
Innovation Solution
A laminate semiconductor package design featuring a thermally conductive substrate with an electrically insulating thickness-matching layer that matches the semiconductor die's thickness, allowing for a planar upper surface, enabling direct embedding without recesses or cavities, using stacked dielectric and metallization layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a recess or cavity is formed in the substrate to accommodate a thick semiconductor die, then the thick die can be integrated into the package, but the manufacturing complexity and cost increase significantly
Solution Approach 1:
Instead of removing material to create a recess for the thick die, the invention adds material by forming a protrusion on the substrate surface. This inverted approach eliminates complex cavity formation while achieving the same goal of accommodating the thick die through the thickness-matching layer.
Solution Approach 2:
The thickness-matching layer acts as an intermediary structure between the substrate and the thick semiconductor die. This intermediate protrusion provides the necessary height difference to accommodate the thick die without requiring complex substrate modifications, thereby reducing manufacturing complexity.
2Ease of manufacture
If standard manufacturing methods are used without thickness-matching structures, then the manufacturing process remains simple, but thick semiconductor dies cannot be properly integrated
Solution Approach 1:
The thickness-matching protrusion is formed on the substrate surface before the semiconductor die is mounted. This preliminary action prepares the substrate to accommodate the thick die, allowing standard manufacturing methods to be used subsequently without compromising either manufacturing simplicity or the ability to integrate thick dies.
3Adaptability or versatility
If the semiconductor die thickness varies, then different die designs can be accommodated, but maintaining a planar surface becomes difficult without additional structures
Solution Approach 1:
The thickness-matching protrusion provides localized height adjustment only in the region where the thick die is mounted. This local modification maintains the planarity of the overall substrate surface while accommodating variations in die thickness at specific locations, thereby resolving the conflict between adaptability and planarity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration simplifies the integration of thick semiconductor dies, such as GaN HEMT devices, into laminate packages cost-effectively, maintaining a planar surface and facilitating electrical and thermal connections.
Implementation Method 1
a thermally conductive substrate that comprises a planar upper surface... The semiconductor die may be mounted on a metal substrate, which may act as a heat sink mechanism
Data Source
AI summary
A semiconductor package includes a laminate package body and a die assembly embedded within the laminate package body. The laminate package body includes a plurality of laminate dielectric layers stacked on top of one another and metallization layers interposed between the laminate dielectric layers. The die assembly includes a thermally conductive substrate that includes a planar upper surface, a semiconductor die mounted on the planar upper surface of the thermally conductive substrate, and an electrically insulating thickness-matching layer formed on the planar upper surface of the thermally conductive substrate and surrounding the semiconductor die. An upper surface of the electrically insulating thickness-matching layer is substantially coplanar with an upper surface of the semiconductor die. The upper surface of the electrically insulating thickness-matching layer and the upper surface of the semiconductor die form an upper surface of the die assembly.


